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고온응용을 위한 SiC MOSFET 문턱전압 모델

이원선, 최재승, 신동현, 박근형, 김영석, 오충완, 이형규

Modeling the Threshold Voltage of Sic MOSFETs for High Temperature Applications

Weon Seon Lee, Jae Seung Choi, Dong Hyun Shin, Keun Hyung Park, Yeong Seuk Kim, Chung Wan Oh, Hyung Gyoo Lee
J Korean Inst Electr Electron Mater Eng 2002;15(7):559-563.
Published online: July 1, 2002
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Modeling the Threshold Voltage of Sic MOSFETs for High Temperature Applications
J Korean Inst Electr Electron Mater Eng. 2002;15(7):559-563.   Published online July 1, 2002
DOI: https://doi.org/10.4313/JKEM.2002.15.7.559
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Modeling the Threshold Voltage of Sic MOSFETs for High Temperature Applications
J Korean Inst Electr Electron Mater Eng. 2002;15(7):559-563.   Published online July 1, 2002
DOI: https://doi.org/10.4313/JKEM.2002.15.7.559
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