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비휘발성 메모리 소자응용을 위한 과잉 Bi 첨가에 따른 BLT 박막의 강유전 특성

김경태, 김창일, 강동희, 심일운

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films with Excess Bi Contents for Non - Volatile Memory Device Application

Kyoung Tae Kim, Chang Il Kim, Dong Hee Kang, Il Wun Shim
J Electr Electron Mater 2002;15(9):764-769.
Published online: September 1, 2002
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Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films with Excess Bi Contents for Non - Volatile Memory Device Application
J Electr Electron Mater. 2002;15(9):764-769.   Published online September 1, 2002
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films with Excess Bi Contents for Non - Volatile Memory Device Application
J Electr Electron Mater. 2002;15(9):764-769.   Published online September 1, 2002
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