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극한 환경 MEMS용 2˝ 3C-SiC기판의 직접접합 특성

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Direct Bonding Characteristics of 2˝ 3C-SiC Wafers for Harsh Environment MEMS Applications

Gwi Sang Jeong
J Electr Electron Mater 2003;16(8):700-704.
Published online: August 1, 2003
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Direct Bonding Characteristics of 2˝ 3C-SiC Wafers for Harsh Environment MEMS Applications
J Electr Electron Mater. 2003;16(8):700-704.   Published online August 1, 2003
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Direct Bonding Characteristics of 2˝ 3C-SiC Wafers for Harsh Environment MEMS Applications
J Electr Electron Mater. 2003;16(8):700-704.   Published online August 1, 2003
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