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Oxide-Nitride-Oxide막을 게이트 절연막으로 사용하여 제조한 다결정실리콘 박막트렌지스터의 특성

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Properties of Poly-Si TFT`s using Oxide-Nitride-Oxide Films as Gate Insulators

In Chan Lee, Dae Yeong Ma
J Electr Electron Mater 2003;16(12):1065-1070.
Published online: December 1, 2003
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Properties of Poly-Si TFT`s using Oxide-Nitride-Oxide Films as Gate Insulators
J Electr Electron Mater. 2003;16(12):1065-1070.   Published online December 1, 2003
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Properties of Poly-Si TFT`s using Oxide-Nitride-Oxide Films as Gate Insulators
J Electr Electron Mater. 2003;16(12):1065-1070.   Published online December 1, 2003
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