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MEMS 적용을 위한 Thermal CVD 방법에 의해 증착한 SiC막의 반응성 이온 Etching 특성 평가

최기용, 최덕균, 박지연, 김태송

Reactive ion Etching Characterization of SiC Film Deposited by Thermal CVD Method for MEMS Application

Gi Yong Choe, Deog Gyun Choe, Ji Yeon Park, Tae Song Kim
J Korean Inst Electr Electron Mater Eng 2004;17(3):299-304.
Published online: March 1, 2004
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Reactive ion Etching Characterization of SiC Film Deposited by Thermal CVD Method for MEMS Application
J Korean Inst Electr Electron Mater Eng. 2004;17(3):299-304.   Published online March 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.3.299
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Include:
Reactive ion Etching Characterization of SiC Film Deposited by Thermal CVD Method for MEMS Application
J Korean Inst Electr Electron Mater Eng. 2004;17(3):299-304.   Published online March 1, 2004
DOI: https://doi.org/10.4313/JKEM.2004.17.3.299
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