Fabrication and Electrical Properties of InGaAs / InP Resonant Tunneling Diode

Byung Su Yoo; Woo Sun Lee

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InGaAs / InP 공명 터널다이오드의 제작과 전기적 특성

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Fabrication and Electrical Properties of InGaAs / InP Resonant Tunneling Diode

Byung Su Yoo, Woo Sun Lee

J Electr Electron Mater 1993;6(4):324-328.

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Fabrication and Electrical Properties of InGaAs / InP Resonant Tunneling Diode

J Electr Electron Mater. 1993;6(4):324-328.

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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Fabrication and Electrical Properties of InGaAs / InP Resonant Tunneling Diode

J Electr Electron Mater. 1993;6(4):324-328.

Articles

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InGaAs / InP 공명 터널다이오드의 제작과 전기적 특성

Fabrication and Electrical Properties of InGaAs / InP Resonant Tunneling Diode

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