Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
Search
Advanced Search
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

Page Path

산화막 CMP 공정에서 슬러리 온도 변화에 따른 연마 특성

고필주, 박성우, 김남훈, 서용진, 이우선

Polishing Properties by Change of Slurry Temperature in Oxide CMP

, , , ,
J Electr Electron Mater 2005;18(3):219-225.
Published online: March 1, 2005
  • 7 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Full Article

Download PDF Download PDF

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Polishing Properties by Change of Slurry Temperature in Oxide CMP
J Electr Electron Mater. 2005;18(3):219-225.   Published online March 1, 2005
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
Polishing Properties by Change of Slurry Temperature in Oxide CMP
J Electr Electron Mater. 2005;18(3):219-225.   Published online March 1, 2005
Close

Related articles

ABOUT

BROWSE ARTICLES

EDITORIAL POLICIES

FOR CONTRIBUTORS

© The Korean Institute of Electrical and Electronic Materials Engineers.