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저압화학증착을 이용한 실리콘-게르마늄 이종접합구조의 에피성장과 소자제작 기술 개발

김규환, 김상훈, 송영주, 이내응, 임정욱, 강진영

Development of SiGe Heterostructure Epitaxial Growth and Device Fabrication Technology using Reduced Pressure Chemical Vapor Deposition

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J Korean Inst Electr Electron Mater Eng 2005;18(4):285-296.
Published online: April 1, 2005
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Development of SiGe Heterostructure Epitaxial Growth and Device Fabrication Technology using Reduced Pressure Chemical Vapor Deposition
J Korean Inst Electr Electron Mater Eng. 2005;18(4):285-296.   Published online April 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.4.285
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Include:
Development of SiGe Heterostructure Epitaxial Growth and Device Fabrication Technology using Reduced Pressure Chemical Vapor Deposition
J Korean Inst Electr Electron Mater Eng. 2005;18(4):285-296.   Published online April 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.4.285
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