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나노 CMOS 소자 적용을 위한 질소 분위기에서 형성된 질화막을 이용한 폴리실리콘 적층 구조

호원준, 이희덕

A Stacked Polusilicon Strucutre by Nitridation in N2 Atmosphere for Nano-scale CMOSFETs

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J Korean Inst Electr Electron Mater Eng 2005;18(11):1001-1006.
Published online: November 1, 2005
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A Stacked Polusilicon Strucutre by Nitridation in N2 Atmosphere for Nano-scale CMOSFETs
J Korean Inst Electr Electron Mater Eng. 2005;18(11):1001-1006.   Published online November 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.11.1001
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
A Stacked Polusilicon Strucutre by Nitridation in N2 Atmosphere for Nano-scale CMOSFETs
J Korean Inst Electr Electron Mater Eng. 2005;18(11):1001-1006.   Published online November 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.11.1001
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