Effect of Adhesion Layer on Gate Insulator

doi:10.4313/JKEM.2006.19.4.357

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게이트 절연막에 사용된 점착층에 대한 영향

이동현, 형건우, 표상우, 김영관

Effect of Adhesion Layer on Gate Insulator

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J Korean Inst Electr Electron Mater Eng 2006;19(4):357-361.
Published online: April 1, 2006

DOI: https://doi.org/10.4313/JKEM.2006.19.4.357

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Keywords: Vapor deposition polymerization, VDP, organic thin-film-transistors, OTFTs, Adhesion Layer

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Effect of Adhesion Layer on Gate Insulator

J Korean Inst Electr Electron Mater Eng. 2006;19(4):357-361. Published online April 1, 2006

DOI: https://doi.org/10.4313/JKEM.2006.19.4.357

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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bib — For JabRef, BibDesk, and other BibTeX-specific software

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Effect of Adhesion Layer on Gate Insulator

J Korean Inst Electr Electron Mater Eng. 2006;19(4):357-361. Published online April 1, 2006

DOI: https://doi.org/10.4313/JKEM.2006.19.4.357

Articles

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게이트 절연막에 사용된 점착층에 대한 영향

Effect of Adhesion Layer on Gate Insulator

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