Passivation Properties of SiNx Thin Film for OLED Device

doi:10.4313/JKEM.2006.19.8.758

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SiNx 박막에 의한 OLED 소자의 보호막 특성

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Passivation Properties of SiNx Thin Film for OLED Device

J Korean Inst Electr Electron Mater Eng 2006;19(8):758-763.
Published online: August 1, 2006

DOI: https://doi.org/10.4313/JKEM.2006.19.8.758

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Keywords: OLED, Encapsulation, Thin film, Passivation, Life time

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Passivation Properties of SiNx Thin Film for OLED Device

J Korean Inst Electr Electron Mater Eng. 2006;19(8):758-763. Published online August 1, 2006

DOI: https://doi.org/10.4313/JKEM.2006.19.8.758

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Passivation Properties of SiNx Thin Film for OLED Device

J Korean Inst Electr Electron Mater Eng. 2006;19(8):758-763. Published online August 1, 2006

DOI: https://doi.org/10.4313/JKEM.2006.19.8.758

Articles

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SiNx 박막에 의한 OLED 소자의 보호막 특성

Passivation Properties of SiNx Thin Film for OLED Device

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