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Short Channel GaAs MESFET의 채널전하분포와 채널전하에 의한 전위장벽의 변화

원창섭, 이명수, 류세환, 한득영, 안형근

Potential Barrier Shift Caused by Channel Charge in Short Channel GaAs MESFET

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J Korean Inst Electr Electron Mater Eng 2006;19(9):793-799.
Published online: September 1, 2006
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Potential Barrier Shift Caused by Channel Charge in Short Channel GaAs MESFET
J Korean Inst Electr Electron Mater Eng. 2006;19(9):793-799.   Published online September 1, 2006
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Potential Barrier Shift Caused by Channel Charge in Short Channel GaAs MESFET
J Korean Inst Electr Electron Mater Eng. 2006;19(9):793-799.   Published online September 1, 2006
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