Effect of High Temperature Annealing on the Characteristics of SiC Schottky Diodes

doi:10.4313/JKEM.2006.19.9.818

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고온 열처리 공정이 탄화규소 쇼트키 다이오드 특성에 미치는 영향

정희종, 방욱, 강인호, 김상철, 한현숙, 김형우, 김남균, 이용재

Effect of High Temperature Annealing on the Characteristics of SiC Schottky Diodes

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J Korean Inst Electr Electron Mater Eng 2006;19(9):818-824.
Published online: September 1, 2006

DOI: https://doi.org/10.4313/JKEM.2006.19.9.818

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Keywords: Silicon carbide, Schottky diode, High temperature annealing, Surface transfiguration Layer, Graphite cap, Leakage current

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Effect of High Temperature Annealing on the Characteristics of SiC Schottky Diodes

J Korean Inst Electr Electron Mater Eng. 2006;19(9):818-824. Published online September 1, 2006

DOI: https://doi.org/10.4313/JKEM.2006.19.9.818

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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bib — For JabRef, BibDesk, and other BibTeX-specific software

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Citation and abstract for the content below

Effect of High Temperature Annealing on the Characteristics of SiC Schottky Diodes

J Korean Inst Electr Electron Mater Eng. 2006;19(9):818-824. Published online September 1, 2006

DOI: https://doi.org/10.4313/JKEM.2006.19.9.818

Articles

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고온 열처리 공정이 탄화규소 쇼트키 다이오드 특성에 미치는 영향

Effect of High Temperature Annealing on the Characteristics of SiC Schottky Diodes

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