Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
Search
Advanced Search
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

Page Path

나노급 CMOSFET을 위한 SOI기판에 도핑된 B11을 이용한 니켈-실리사이드의 열안정성 개선

정순연, 오순영, 이원재, 장잉잉, 종준, 이세광, 김영철, 이가원, 왕진석, 이희덕

Thermal Stability Improvement of Ni-Silicide on the SOI Substrate Doped B11 for Nano-scale CMOSFET

, , , , , , , , ,
J Electr Electron Mater 2006;19(11):1000-1004.
Published online: November 1, 2006
  • 11 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
next

Full Article

Download PDF Download PDF

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Thermal Stability Improvement of Ni-Silicide on the SOI Substrate Doped B11 for Nano-scale CMOSFET
J Electr Electron Mater. 2006;19(11):1000-1004.   Published online November 1, 2006
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
Thermal Stability Improvement of Ni-Silicide on the SOI Substrate Doped B11 for Nano-scale CMOSFET
J Electr Electron Mater. 2006;19(11):1000-1004.   Published online November 1, 2006
Close

Related articles

ABOUT

BROWSE ARTICLES

EDITORIAL POLICIES

FOR CONTRIBUTORS

© The Korean Institute of Electrical and Electronic Materials Engineers.