Fabrication and Electrical Properties of SiC MIS Structures using Aluminum Oxide Thin Film

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산화알루미늄 박막을 이용한 SiC MIS 구조의 제작 및 전기적 특성

최행철, 정순원, 정상현, 윤형선, 김광호

Fabrication and Electrical Properties of SiC MIS Structures using Aluminum Oxide Thin Film

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J Electr Electron Mater 2007;20(10):859-863.
Published online: October 1, 2007

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Keywords: Aluminum oxide, MIS, 6H-SiC, Sputtering, Interface trap density

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Fabrication and Electrical Properties of SiC MIS Structures using Aluminum Oxide Thin Film

J Electr Electron Mater. 2007;20(10):859-863. Published online October 1, 2007

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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Fabrication and Electrical Properties of SiC MIS Structures using Aluminum Oxide Thin Film

J Electr Electron Mater. 2007;20(10):859-863. Published online October 1, 2007

Articles

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산화알루미늄 박막을 이용한 SiC MIS 구조의 제작 및 전기적 특성

Fabrication and Electrical Properties of SiC MIS Structures using Aluminum Oxide Thin Film

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