Hole Mobility Enhancement in (100)- and (110)-surface of Ultrathin-body (UTB) Silicon-on-insulator (SOI) Metal Oxide Semiconductors Field Effect Transistor

doi:10.4313/JKEM.2007.20.11.939

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Ultrathin-boby SOI MOSFETs에서 면방향에 따른 정공의 이동도 증가

김관수, 조원주

Hole Mobility Enhancement in (100)- and (110)-surface of Ultrathin-body (UTB) Silicon-on-insulator (SOI) Metal Oxide Semiconductors Field Effect Transistor

J Korean Inst Electr Electron Mater Eng 2007;20(11):939-942.
Published online: November 1, 2007

DOI: https://doi.org/10.4313/JKEM.2007.20.11.939

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Keywords: Ultrathin-body, SQI, Hole mobility enhancement, Quantum confinement effect

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Hole Mobility Enhancement in (100)- and (110)-surface of Ultrathin-body (UTB) Silicon-on-insulator (SOI) Metal Oxide Semiconductors Field Effect Transistor

J Korean Inst Electr Electron Mater Eng. 2007;20(11):939-942. Published online November 1, 2007

DOI: https://doi.org/10.4313/JKEM.2007.20.11.939

Download Citation

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Hole Mobility Enhancement in (100)- and (110)-surface of Ultrathin-body (UTB) Silicon-on-insulator (SOI) Metal Oxide Semiconductors Field Effect Transistor

J Korean Inst Electr Electron Mater Eng. 2007;20(11):939-942. Published online November 1, 2007

DOI: https://doi.org/10.4313/JKEM.2007.20.11.939

Articles

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Ultrathin-boby SOI MOSFETs에서 면방향에 따른 정공의 이동도 증가

Hole Mobility Enhancement in (100)- and (110)-surface of Ultrathin-body (UTB) Silicon-on-insulator (SOI) Metal Oxide Semiconductors Field Effect Transistor

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