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Ultrathin-boby SOI MOSFETs에서 면방향에 따른 정공의 이동도 증가

김관수, 조원주

Hole Mobility Enhancement in (100)- and (110)-surface of Ultrathin-body (UTB) Silicon-on-insulator (SOI) Metal Oxide Semiconductors Field Effect Transistor

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J Electr Electron Mater 2007;20(11):939-942.
Published online: November 1, 2007
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Hole Mobility Enhancement in (100)- and (110)-surface of Ultrathin-body (UTB) Silicon-on-insulator (SOI) Metal Oxide Semiconductors Field Effect Transistor
J Electr Electron Mater. 2007;20(11):939-942.   Published online November 1, 2007
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
Hole Mobility Enhancement in (100)- and (110)-surface of Ultrathin-body (UTB) Silicon-on-insulator (SOI) Metal Oxide Semiconductors Field Effect Transistor
J Electr Electron Mater. 2007;20(11):939-942.   Published online November 1, 2007
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