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산화알루미늄 박막을 이용한 GaN MIS 구조의 제작 및 전기적 특성

윤형선, 정상현, 곽노원, 김가람, 이우석, 김광호, 서주옥

Fabrication and Electrical Properties of GaN MIS Structures using Aluminum Oxide Thin Film

Hyeong Seon Yun, Sang Hyun Jeong, No Won Kwak, Ka Lam Kim, Woo Seok Lee, Kwang Ho Kim, Ju Ok Seo
J Electr Electron Mater 2008;21(4):329-334.
Published online: April 1, 2008
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Fabrication and Electrical Properties of GaN MIS Structures using Aluminum Oxide Thin Film
J Electr Electron Mater. 2008;21(4):329-334.   Published online April 1, 2008
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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Fabrication and Electrical Properties of GaN MIS Structures using Aluminum Oxide Thin Film
J Electr Electron Mater. 2008;21(4):329-334.   Published online April 1, 2008
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