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Negative-bias Temperature Instability 및 Hot-carrier Injection을 통한 중수소 주입된 게이트 산화막의 신뢰성 분석

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Reliability Analysis for Deuterium Incorporated Gate Oxide Film through Negative-bias Temperature Instability and Hot-carrier Injection

Jae Sung Lee
J Electr Electron Mater 2008;21(8):687-694.
Published online: August 1, 2008
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Reliability Analysis for Deuterium Incorporated Gate Oxide Film through Negative-bias Temperature Instability and Hot-carrier Injection
J Electr Electron Mater. 2008;21(8):687-694.   Published online August 1, 2008
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Reliability Analysis for Deuterium Incorporated Gate Oxide Film through Negative-bias Temperature Instability and Hot-carrier Injection
J Electr Electron Mater. 2008;21(8):687-694.   Published online August 1, 2008
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