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Conventional CMOS 공정을 위한 GGNMOS Type의 ESD보호소조의 TLP특성 평가

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TLP Properties Evaluation of ESD Protection Device of GGNMOS Type for Conventional CMOS Process

Tae Il Lee, Hong Bae Kim
J Electr Electron Mater 2008;21(10):875-880.
Published online: October 1, 2008
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TLP Properties Evaluation of ESD Protection Device of GGNMOS Type for Conventional CMOS Process
J Electr Electron Mater. 2008;21(10):875-880.   Published online October 1, 2008
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
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TLP Properties Evaluation of ESD Protection Device of GGNMOS Type for Conventional CMOS Process
J Electr Electron Mater. 2008;21(10):875-880.   Published online October 1, 2008
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