Simulated DC Charceristics of AlGaN HEMTs with Trench Shapped Source, Dracin Strucures

Kang Min Jung; Young Soo Lee; Su Jin Kim; Dong Ho Kim; Jae Moo Kim; Hong Goo Choi; Cheol Koo Hahn; Tae Geun Kim

doi:10.4313/JKEM.2008.21.10.885

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트렌치 구조의 소스와 드레인 구조를 갖는 AlGaN/GaN HEMT의 DC출력특성 전산모사

정강민, 이영수, 김수진, 김동호, 김재무, 최흥구, 한철구, 김태근

Simulated DC Charceristics of AlGaN HEMTs with Trench Shapped Source, Dracin Strucures

Kang Min Jung, Young Soo Lee, Su Jin Kim, Dong Ho Kim, Jae Moo Kim, Hong Goo Choi, Cheol Koo Hahn, Tae Geun Kim

J Korean Inst Electr Electron Mater Eng 2008;21(10):885-888.
Published online: October 1, 2008

DOI: https://doi.org/10.4313/JKEM.2008.21.10.885

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Keywords: GaN, HEMT, Contact resistance, Transconductance

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Simulated DC Charceristics of AlGaN HEMTs with Trench Shapped Source, Dracin Strucures

J Korean Inst Electr Electron Mater Eng. 2008;21(10):885-888. Published online October 1, 2008

DOI: https://doi.org/10.4313/JKEM.2008.21.10.885

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Simulated DC Charceristics of AlGaN HEMTs with Trench Shapped Source, Dracin Strucures

J Korean Inst Electr Electron Mater Eng. 2008;21(10):885-888. Published online October 1, 2008

DOI: https://doi.org/10.4313/JKEM.2008.21.10.885

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트렌치 구조의 소스와 드레인 구조를 갖는 AlGaN/GaN HEMT의 DC출력특성 전산모사

Simulated DC Charceristics of AlGaN HEMTs with Trench Shapped Source, Dracin Strucures

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