An Analysis of IGBT (Insulator Gate Bipolar Transistor) Structure with an Additional Circular Trench Gate using wet Oxidation

Sang Hyeon Kwak; Sin Su Kyoung; Man Young Sung

doi:10.4313/JKEM.2008.21.11.981

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습식 산화를 이용한 원형 트렌치 게이트 IGBT에 관한 연구

곽상현, 경신수, 성만영

An Analysis of IGBT (Insulator Gate Bipolar Transistor) Structure with an Additional Circular Trench Gate using wet Oxidation

Sang Hyeon Kwak, Sin Su Kyoung, Man Young Sung

J Korean Inst Electr Electron Mater Eng 2008;21(11):981-986.
Published online: November 1, 2008

DOI: https://doi.org/10.4313/JKEM.2008.21.11.981

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Keywords: Circular trench, Wet oxidation, Breakdown voltage, On state voltage drop

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An Analysis of IGBT (Insulator Gate Bipolar Transistor) Structure with an Additional Circular Trench Gate using wet Oxidation

J Korean Inst Electr Electron Mater Eng. 2008;21(11):981-986. Published online November 1, 2008

DOI: https://doi.org/10.4313/JKEM.2008.21.11.981

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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An Analysis of IGBT (Insulator Gate Bipolar Transistor) Structure with an Additional Circular Trench Gate using wet Oxidation

J Korean Inst Electr Electron Mater Eng. 2008;21(11):981-986. Published online November 1, 2008

DOI: https://doi.org/10.4313/JKEM.2008.21.11.981

Fabrication of Enclosed-Layout Transistors (ELTs) Through Low-Temperature Deuterium Annealing and Their Electrical Characterizations

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습식 산화를 이용한 원형 트렌치 게이트 IGBT에 관한 연구

An Analysis of IGBT (Insulator Gate Bipolar Transistor) Structure with an Additional Circular Trench Gate using wet Oxidation

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