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고성능 PMOSFET을 위한 Ni-silicide와 P+ Source/drain 사이의 Barrier Height 감소

공선규, 장잉잉, 박기영, 이세광, 정순연, 신홍식, 이가원, 왕진석, 이희덕

Reduction of Barrier Height between Ni-silicide and P+ Source/drain for High Performance PMOSFET

Sun Kyu Kong, Ying Ying Zhang, Kee Young Park, Shi Guang Li, Soon Yen Jung, Hong Sik Shin, Ga Won Lee, Jin Suk Wang, Hi Deok Lee
J Electr Electron Mater 2009;22(6):457-461.
Published online: June 1, 2009
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Reduction of Barrier Height between Ni-silicide and P+ Source/drain for High Performance PMOSFET
J Electr Electron Mater. 2009;22(6):457-461.   Published online June 1, 2009
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Include:
Reduction of Barrier Height between Ni-silicide and P+ Source/drain for High Performance PMOSFET
J Electr Electron Mater. 2009;22(6):457-461.   Published online June 1, 2009
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