Study on Modeling of GaN Power FET

Ey Goo Kang; Hun Suk Chung; Beum Jun Kim; Young Hun Lee

Articles

Page Path

GaN Power FET 모델링에 관한 연구

강이구, 정헌석, 김범준, 이용훈

Study on Modeling of GaN Power FET

Ey Goo Kang, Hun Suk Chung, Beum Jun Kim, Young Hun Lee

J Electr Electron Mater 2009;22(12):1018-1022.
Published online: December 1, 2009

7 Views
0 Download
0 Crossref
0 Scopus

prev next

Full Article

Download PDF

Keywords: Static induction transistor, GaN, Epi Layer, High voltage, Power devices

Cite

CITE

export

Copy Download

Format

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

RIS — For EndNote, ProCite, RefWorks, and most other reference management software
BibTeX — For JabRef, BibDesk, and other BibTeX-specific software

Include:

Citation for the content below
Citation and abstract for the content below

Study on Modeling of GaN Power FET

J Electr Electron Mater. 2009;22(12):1018-1022. Published online December 1, 2009

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

RIS — For EndNote, ProCite, RefWorks, and most other reference management software
bib — For JabRef, BibDesk, and other BibTeX-specific software

Include:

Citation for the content below
Citation and abstract for the content below

Study on Modeling of GaN Power FET

J Electr Electron Mater. 2009;22(12):1018-1022. Published online December 1, 2009

Articles

Page Path

GaN Power FET 모델링에 관한 연구

Study on Modeling of GaN Power FET

Full Article

CITE

Download Citation

Format:

Include:

Related articles

ABOUT

BROWSE ARTICLES

EDITORIAL POLICIES

FOR CONTRIBUTORS