Study on Design of 2500 V NPT IGBT

Ey Goo Kang; Ahn Byoung Sub; Tae Jin Nam

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2500 V급 NPT-IGBT소자의 설계에 관한 연구

강이구, 안병섭, 남태진

Study on Design of 2500 V NPT IGBT

Ey Goo Kang, Ahn Byoung Sub, Tae Jin Nam

J Electr Electron Mater 2010;23(4):273-279.
Published online: April 1, 2010

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Keywords: Insulated gate bipolar transistor, Breakdown voltage, On resistance

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Study on Design of 2500 V NPT IGBT

J Electr Electron Mater. 2010;23(4):273-279. Published online April 1, 2010

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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Study on Design of 2500 V NPT IGBT

J Electr Electron Mater. 2010;23(4):273-279. Published online April 1, 2010

A Study on State Analysis of Substation Using PMU

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2500 V급 NPT-IGBT소자의 설계에 관한 연구

Study on Design of 2500 V NPT IGBT

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