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Pb(Zr0.54Ti0.46)O3 + 0.2 wt% Cr2O3 + 1.0 wt% Nb2O5 조성의 압전 후막을 이용한 유니몰프형 캔틸레버 발전기(UCG)의 최적화

정영훈, 김경범, 김창일, 윤지선, 남중희, 조정호, 백종후, 남산, 성태현

Optimization of the Unimorph Cantilever Generator (UCG) Using Pb(Zr0.54Ti0.46)O3 + 0.2 wt% Cr2O3 + 1.0 wt% Nb2O5 thick films

Young Hun Jeong, Kyoung Bum Kim, Chang Il Kim, Ji Sun Yun, Jung Hee Nahm, Jeong Ho Cho, Jong Hoo Paik, Sahn Nahm, Tae Hyun Seong
J Electr Electron Mater 2012;25(12):955-960.
Published online: December 1, 2012
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Pb(Zr0.54Ti0.46)O3 + 0.2 wt% Cr2O3 + 1.0 wt% Nb2O5 (PZCN) 후막은 테잎 캐스팅 방법으로 성공적으로 제조하였다. 1,050℃에서 소결한 압전 소자를 통해 d33= 370 pC/N, kp= 0.44, 그리고 d33·g33 of 13,050·10-15m2/N 의 우수한 압전 및 유전 특성을 관찰할 수 있었으며, 이러한 압전 소자를 이용하여 길이를 변화시켜 출력 전력 특성을 관찰한 결과 F샘플 (57.7 mm)에서 가장 높은 4.68 mW (1.221 mW/cm3)로 관찰되었다. 길이가 증가될수록 출력 전력 값은 증가되었으며, E-F샘플에서 급격히 증가되었다. 또한 공진주파수는 A-D샘플에서는 7 Hz, E-F 샘플에서는 8 Hz로 관찰되어 소자의 크기에 따라 SSB의 공진주파수에 영향을 주는 것을 확인하였다.

We fabricated piezoelectric unimorph cantilever generators (UCG) using Pb(Zr0.54Ti0.46)O3 + 0.2 wt% Cr2O3 + 1.0 wt% Nb2O5 (PZCN) piezoelectric thick films, which were produced by a tape casting method. The PZCN thick films were tailored with same width and thickness but different lengths from 7.7 to 57.7 mm in order to evaluate optimized UCG for energy harvesting device applications. When the length of PZCN film was increased, the resonance frequency of UCG was slightly increased from 7 Hz to 8 Hz, which could be due to enlarged area of the highly stiff piezo-ceramic film. However, the output power was proportionally increased with the length of PZCT film and it reached 4.68 mW (1.221 mW/cm3) when the film`s length was 57.7 mm under 25 g of tip mass at 8 Hz, which is sufficient for micro-scale device applications.

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Optimization of the Unimorph Cantilever Generator (UCG) Using Pb(Zr0.54Ti0.46)O3 + 0.2 wt% Cr2O3 + 1.0 wt% Nb2O5 thick films
J Electr Electron Mater. 2012;25(12):955-960.   Published online December 1, 2012
Download Citation

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Optimization of the Unimorph Cantilever Generator (UCG) Using Pb(Zr0.54Ti0.46)O3 + 0.2 wt% Cr2O3 + 1.0 wt% Nb2O5 thick films
J Electr Electron Mater. 2012;25(12):955-960.   Published online December 1, 2012
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