YBCO thin films on SiO2/Si substrate were fabricated by spin-coaing of an alkoxide-derived precursor and heat treatment. The structural and electrical properties of the YBCO films were investigated as functions of annealing temperature at 600∼800℃. Although YBCO single phase was not synthesized, dense films of YBCO matrix phase and minor second phases have been successfully fabricated at the annealing temperatures of 650∼800℃. Thickness and temperature coefficient of resistance (TCR) of YBCO thin films with annealing temperature of 750℃ were 0.31 μm and -2.92%/℃,respectively.
