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전자 세라믹 : Bi 계열 Glass Frit 조성이 계면저항에 미치는 영향

김인애, 신효순, 여동훈, 정대용

Regular Paper : The Effects of Composition on the Interface Resistance in Bi-System Glass Frit

In Ae Kim, Hyo Soon Shin, Dong Hun Yeo, Dae Yong Jeong
J Electr Electron Mater 2013;26(12):858-862.
Published online: December 1, 2013
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The front electrode should be used to make solar cell panel so as to collect electron. The front electrode is used by paste type, printed on the Si-solar cell wafer and sintered at about 800℃. The paste is composed Ag powder and glass frit which make the ohmic contact between Ag electrode and n-type semiconductor layer. From the previous study, the Ag electrodes which used two commercial glass frit of Bi-system were so different on the interface resistance. The main composition of them was Bi-Zn-B-Si-O and few additives added in one of them. In this study, glass frit was made with the ratio of Bi2O3 and ZnO on the main composition, and then paste using glass frit was prepared respectively. And, also, the paste using the glass frit added oxide additives were prepared. The change of interface resistance was not large with the ratio of Bi2O3 and ZnO. In the case of G6 glass frit, 78 wt% Bi2O3 addition, the interface resistance was 190 Ω and most low. In the glass frit added oxide, the case of Ca increased over 10 times than it of G6 glass frit on the interface resistance. It was thaught that after sintering, Ca added glass frit was not flowed to the interface between Ag electrode and wafer but was in the Ag electrode.

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Regular Paper : The Effects of Composition on the Interface Resistance in Bi-System Glass Frit
J Electr Electron Mater. 2013;26(12):858-862.   Published online December 1, 2013
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Regular Paper : The Effects of Composition on the Interface Resistance in Bi-System Glass Frit
J Electr Electron Mater. 2013;26(12):858-862.   Published online December 1, 2013
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