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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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그라핀 양자점을 도핑한 TN 셀의 고속 스위칭 특성

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Fast Switching Properties of TN Cell With Graphene Quantum Dots

Dai Hyun Kim
J Electr Electron Mater 2014;27(2):110-114.
Published online: February 1, 2014
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In this study, we report the doping effect of graphene quantum dots (QDs) in nematic liquid crystal (NLC) system on rubbed polyimide (PI) surface. The good LC alignment and high thermal stability in QD-LC cell system on rubbed PI surfaces can be measured. Also, the low threshold voltage of QD-TN cell was observed about 2.77 V. The fast response time of 13.2 ms for QD-TN cell can be achieved. Finally, the good voltage holding ratio of QD-TN cell on rubbed PI surface was measured.

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Fast Switching Properties of TN Cell With Graphene Quantum Dots
J Electr Electron Mater. 2014;27(2):110-114.   Published online February 1, 2014
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Fast Switching Properties of TN Cell With Graphene Quantum Dots
J Electr Electron Mater. 2014;27(2):110-114.   Published online February 1, 2014
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