초록

본 논문은 90 nm CMOS 공정기술이 적용된 팔각형 구조의 인덕터의 underpass에 따른 quality factor 및 breakdown 전압 특성에 대해 연구하였다. 두 개 이상의 금속선으로 underpass를 설계하였을 경우 한 개로 금속선을 설계하였을 때보다 quality factor 및 breakdwon 전압이 상승하였다. 그러나 underpass를 세 개 이상의 금속선으로 설계하였을 경우에는 두 개의 금속선으로 설계하였을 때와 큰 차이가 나지 않았다.

Abstract

In this paper, the effect of underpass structure on quality factor and breakdown voltage ofoctagonal inductors which were fabricated with 90 nm complementary metal-oxide-semiconductor (CMOS)technology for radio frequency integrated circuit (RFIC) was studied. It was found that quality factor andbreakdown voltage of inductors with more than one metal layer for underpass showed improvedproperties compared to those with one metal layer. However, little change of quality factor andbreakdown voltage was observed between the inductors with two and more than two metal layers forunderpass. Therefore, underpasses with two metal layers are promising for RFIC designs of the octagonalinductors in 90 nm CMOS technology.

• Keywords: Quality factor, Breakdown voltage, Effective inductance, Underpass