The resistive switching characteristics of resistive random access memory (ReRAM) based onamorphous Ge0.5Se0.5 thin films have been demonstrated by using Ti/Ag nanocrystals/Ge0.5Se0.5/Ptstructure. Ag nanocrystals (Ag NCs) were spread on the amorphous Ge0.5Se0.5 thin film and they playedthe role of metal ions source. As a result, comparing the conventional Ag/Ge0.5Se0.5/Pt structure, thisTi/Ag NCs/Ge0.5Se0.5/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS)characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DCendurance(> 100 cycles), and the excellent data retention (> 104 sec) properties were found from theTi/Ag NCs/Ge0.5Se0.5/Pt structured ReRAM device.
