We have investigated the effect of electrical properties of amorphous InGaZnO thin filmtransistors (a-IGZO TFTs) by post thermal annealing in O2 ambient.The post-annealed in O2 ambienta-IGZOTFT is found to be more stable to be used for oxide-based TFT devices, and has betterperformance, such as the on/off current ratios, sub-threshold voltage gate swing, and, as well asreasonable threshold voltage, than others do. The interface trap density is controlled to achieve theoptimum value of TFT transfer and output characteristics. The device performance is significantlyaffected by adjusting the annealing condition. This effect is closely related with the modulation annealingmethod by reducing the localized trapping carriers and defect centers at the interface or in the channellayer.
