We have investigated the properties of Al-doped ZnO (AZO) thin films as functions of atomic layer deposition (ALD) oxidants. AZO transparent conducting oxides (TCOs) layer was deposited by ALD with adding trimethylaluminum (TMA) and diethylzinc (DEZn). AZO films were deposited at low temperature with H2O and O3 as oxidants. Electrical, optical and structural properties of AZO thin films were investigated by 4-point probe, Hall effect measurement, UV-VIS, and AFM. Microstructure and atomic bonding states were investigated by HRXRD and XPS. The resistivity of AZO films grown using H2O was lower than the films grown using H2O and O3, by approximately two orders of magnitude. The differences in oxygen vacancy peak intensity of AZO films were correlated to the optical and electrical properties.
