This research concerns field rings for 3.3kV planar gate power insulated-gate bipolar transistors (IGBTs). We design an optimal field ring for a 3.3kV power IGBT and analyze its electrical characteristics according to field ring parameters. Based on this background, we obtained 3.3kV high breakdown voltage and a 2.9V on state voltage drop. To obtain high breakdown voltage, we confirmed that the field ring count was 23, and we obtained optimal parameters. The gap distance between field rings 13㎛ and the field ring width was 5㎛. This design technology will be adapted to field stop IGBTs and super junction IGBTs. The thyristor device for a power conversion switch will be replaced with a super high voltage power IGBT.
