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비정질 텔루륨 산화물 박막 특성에 미치는 O2/Ar 가스비율의 영향

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Effect of O2/Ar Gas Ratios on the Characteristics of Amorphous Tellurium Oxide Thin Films

Heon Kong, Gun-hong Jung, Jong-bin Yeo, Hyun-yong Lee
J Electr Electron Mater 2017;30(5):294-300.
Published online: May 1, 2017
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TeOx thin films were deposited at various O2/Ar gas-flow ratios by a reactive RFmagneton sputtering technique from TeO2 and Te targets. X-ray diffraction (XRD) results revealed that the TeOx thin films were amorphous. The structure and chemical composition of the TeOx thin films were investigated by fourier transform infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The optical characteristics of the TeOx thin films were investigated by an Ellipsometer and a UV-VIS-NIR spectrophotometer. According to the O2/Ar gas-flow ratios, the atomic composition ratio of TeOx thin films was divided into two regions(x=1-2, 2-3). Different optical characteristics were shown in each region. With an increasing O2/Ar gas-flow ratio, the refractive index of the TeOx thin films decreased and the optical bandgap of the films increased.

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Effect of O2/Ar Gas Ratios on the Characteristics of Amorphous Tellurium Oxide Thin Films
J Electr Electron Mater. 2017;30(5):294-300.   Published online May 1, 2017
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Effect of O2/Ar Gas Ratios on the Characteristics of Amorphous Tellurium Oxide Thin Films
J Electr Electron Mater. 2017;30(5):294-300.   Published online May 1, 2017
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