For the investigation of dopant profiles in implanted Si1-xGex, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in Si1-xGex are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of Rp and 1.8% deviations of ΔRp owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of Rp and 8.1% deviations of ΔRp in the arsenic implanted Si0.2Ge0.8 layer and 8.5% deviations of Rp and 38% deviations of ΔRp in the Si0.5Ge0.5 layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the Si1-xGex layer becomes more important for accurate device scaling and fabrication technologies.
