Recently, as the process of the MOS device becomes more detailed, and the degree of integration thereof increases, many problems such as leakage current due to an increase in electron tunneling due to the thickness of SiO2 used as a gate oxide have occurred. In order to overcome the limitation of SiO2, many studies have been conducted on HfO2 that has a thermodynamic stability with silicon during processing, has a higher dielectric constant than SiO2, and has an appropriate band gap. In this study, HfO2, which is attracting attention in various fields, was doped with Al and the change in properties according to its concentration was studied. Al-doped HfO2 thin film was deposited using Plasma Enhanced Atomic Layer Deposition (PEALD), and the structural and electrical characteristics of the fabricated MIM device were evaluated. The results of this study are expected to make an essential cornerstone in the future field of next-generation semiconductor device materials.
