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BT 레진 인쇄 회로 기판에 실리콘 몰딩 SMD 660 nm 파장 반도체 레이저 다이오드

김범진, 정필홍, 이재민, 원동환, 이정호, 이헌민, 정구윤, 박건, 카완어닐, 유순재, 채연식, 박성배

Fabrication of 660 nm Wavelength SMD Type Semiconductor Laser Diode Package Using Silicon Molding on BT Resin Circuit Board

Beom Jin Kim, Pil Hong Jeong, Jae Min Lee, Dong Hwan Won, Jeong Ho Lee, Heon Min Lee, Ku Yun Jeong, Keon Park, Kawan Anil, Soon Jae Yu, Yeon Sik Chae, Sung Bae Park
J Electr Electron Mater 2025;38(3):272-277.
Published online: May 1, 2025
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SMD-type 660 nm wavelength semiconductor laser diode device is fabricated using silicon resin molding technology and fabricated a BT resin printed circuit board. BT resin electrode structure printed circuit boards with soldering electrode pads and through holes for heat dissipation were fabricated. The SMD process is an injection molding technique in which the chip is molded from silicon material and then cut by a dicing process to complete the beam emission surface. The fabricated SMD-type semiconductor laser diode exhibits a good near-field beam pattern with no scattering/dispersion caused by the printed circuit board or silicon molding in the emitted laser beam, or reflections around the chip. It was also confirmed that the heat generated at 20 mA operation has good heat dissipation characteristics through the through-hole heat dissipation structure.

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Fabrication of 660 nm Wavelength SMD Type Semiconductor Laser Diode Package Using Silicon Molding on BT Resin Circuit Board
J Electr Electron Mater. 2025;38(3):272-277.   Published online May 1, 2025
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Fabrication of 660 nm Wavelength SMD Type Semiconductor Laser Diode Package Using Silicon Molding on BT Resin Circuit Board
J Electr Electron Mater. 2025;38(3):272-277.   Published online May 1, 2025
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