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ECR 플라즈마에서 BCI3 / SF6 혼합 가스를 이용한 Al0.25Ga0.75As 에 대한 GaAs 의 선택적 식각에 대한 연구

이철욱, 이동육, 손정식, 배인호, 박성배

An Investigation of Selective Etching of GaAs to Al0.25Ga0.75As Using BCI3 / SF6 Gas Mixture in ECR Plasma

Chul Wook Lee, Dong Yul Lee, Jeong Sik Son, In Ho Bae, Sung Bae Park
J Electr Electron Mater 1998;11(6):447-452.
Published online: June 1, 1998
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An Investigation of Selective Etching of GaAs to Al0.25Ga0.75As Using BCI3 / SF6 Gas Mixture in ECR Plasma
J Electr Electron Mater. 1998;11(6):447-452.   Published online June 1, 1998
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Include:
An Investigation of Selective Etching of GaAs to Al0.25Ga0.75As Using BCI3 / SF6 Gas Mixture in ECR Plasma
J Electr Electron Mater. 1998;11(6):447-452.   Published online June 1, 1998
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