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고주파 반응성 스퍼터링에 의해 제작된 InN 박막의 특성

김영호, 최영복, 정성훈, 홍필영, 문동찬, 김선태

Characteristics of InN thin films fabricated by RF reactive sputtering

Young Ho Kim, Young Bok Choi, Sung Hoon Chung, Pil Young Hong, Dong Chan Moon, Sun Tae Kim
J Korean Inst Electr Electron Mater Eng 1998;11(7):527-534.
Published online: July 1, 1998
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Characteristics of InN thin films fabricated by RF reactive sputtering
J Korean Inst Electr Electron Mater Eng. 1998;11(7):527-534.   Published online July 1, 1998
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Characteristics of InN thin films fabricated by RF reactive sputtering
J Korean Inst Electr Electron Mater Eng. 1998;11(7):527-534.   Published online July 1, 1998
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