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Electroreflectance 측정에 의한 Si 이 첨가된 Al0.32Ga0.68As 에서의 E1 전이에 대한 연구

김동렬, 손정식, 김근형, 이철욱, 배인호, 한병국

A Study on E1 Transition in Si - Doped Al0.32Ga0.68As by Electroreflectance Measurement

Dong Lyeul Kim, Jeong Sik Son, Geun Hyoung Kim, Chul Wook Lee, In Ho Bae, Byung Kuk Han
J Electr Electron Mater 1998;11(9):687-692.
Published online: September 1, 1998
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A Study on E1 Transition in Si - Doped Al0.32Ga0.68As by Electroreflectance Measurement
J Electr Electron Mater. 1998;11(9):687-692.   Published online September 1, 1998
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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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A Study on E1 Transition in Si - Doped Al0.32Ga0.68As by Electroreflectance Measurement
J Electr Electron Mater. 1998;11(9):687-692.   Published online September 1, 1998
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