Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
Search
Advanced Search
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

Page Path

Boron 이온이 주입된 GaAs 의 열처리에 따른 발광특성에 관한 연구

최현태, 손정식, 배인호

A Study on the Photoluminescence of Boron lon Implanted GaAs

Hyun Tae Choi, Jeong Sik Son, In Ho Bae
J Electr Electron Mater 1998;11(9):700-704.
Published online: September 1, 1998
  • 3 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Full Article

Download PDF Download PDF

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

A Study on the Photoluminescence of Boron lon Implanted GaAs
J Electr Electron Mater. 1998;11(9):700-704.   Published online September 1, 1998
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
A Study on the Photoluminescence of Boron lon Implanted GaAs
J Electr Electron Mater. 1998;11(9):700-704.   Published online September 1, 1998
Close

Related articles

ABOUT

BROWSE ARTICLES

EDITORIAL POLICIES

FOR CONTRIBUTORS

© The Korean Institute of Electrical and Electronic Materials Engineers.