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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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SiH4 환원에 의한 Selective 텅스텐막 특성에 대한 SiH4 유속의 효과

임영진, 이종무

Effects of SiH4 Gas Flow Rate on the Properties of Selective CVD - W by SiH4 Reduction

Yonng Jin Im, Chong Mu Lee
J Electr Electron Mater 1991;4(2):123-131.
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Effects of SiH4 Gas Flow Rate on the Properties of Selective CVD - W by SiH4 Reduction
J Electr Electron Mater. 1991;4(2):123-131.
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Include:
Effects of SiH4 Gas Flow Rate on the Properties of Selective CVD - W by SiH4 Reduction
J Electr Electron Mater. 1991;4(2):123-131.
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