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Volume 29(1); January 2016

Review paper : Improvement of Electrical Performance in the Oxide Semiconductor Thin Film Transistor Using Various Treatment
Jayapal Raja, Nguyen Thi Cam Phu, Than Thuy Trinh
J Electr Electron Mater 2016;29(1):1-5.   Published online January 1, 2016
The ultimate aims of display market is transparent or flexible. Researches have been carried out for various applications. It has been possible to reduced the process steps and get good electrical properties for semiconductors with large optical bandgaps. Oxide semiconductors have been established as one of the leading and promising technology for next generation display panels. In this paper, alternative treatment processes have been tried for oxide semiconductors of thin film transistors to increase the electrical properties of the thin film transistors and to investigate the mechanisms. There exist a various oxide semiconductors. Here, we focused on InGaZnO, ZnO and InSnZnO which are commercialized or researched actively.
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Effects of Soft Baking Temperature on the Properties of Solution Processed Zn-Sn-O Thin-Film Transistors
Jae Won Lee, Won Ju Choa
J Electr Electron Mater 2016;29(1):6-10.   Published online January 1, 2016
In this study, the effects of soft baking temperature on the solution derived ZTO (Zn-Sn-O) TFTs (thin-film transistors) as a In-free oxide semiconductor were investigated. In spite of the same hard baking at high temperature(600℃), the electrical properties of ZTO TFT was greatly changed by a small difference in soft baking temperature(180~250℃). The performance of TFT was deteriorated as the soft baking temperature increased. Therefore, it is important to remove the water-related defects well as organic impurities from the ZTO films during soft baking for fabrication of solution-derived high performance of TFTs.
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Effects of Rapid Thermal Annealing on the Conduction of a-IGZO Films
Do Hoon Kim, Won Ju Choa
J Electr Electron Mater 2016;29(1):11-16.   Published online January 1, 2016
The conduction behavior and electron concentration change in a-IGZO thin-films according to the RTA (rapid thermal annealing) were studied. The electrical characteristics of TFTs (thin-film-transistors) annealed by different temperatures were measured. The sheet resistance, electron concentration, and oxygen vacancy of a-IGZO film were measured by the four-point-probe-measurement, hall-effect-measurement, and XPS analysis. The RTA process increased the driving current of IGZO TFTs but the VTH shifted to the negative direction at the same time. When the RTA temperature is higher than 250℃, the leakage current at off-state increased significantly. This is attributed to the increase of oxygen vacancy resulting in the increase of electron concentration. We demonstrate that the RTA is a promising process to adjust the VTH of TFT because the RTA process can easily modify the electron concentration and control the conductivity of IGZO film with short process time.
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Insulation Materials : Thermal Analysis and Equivalent Lifetime Prediction of Insulation Material for Nuclear Power Cable
Ji Yeon Kim, Jong Suk Yang, Kyeung Heum Park, Baek Yong Seong, Jeong Hwan Bang, Dae Hee Park
J Electr Electron Mater 2016;29(1):17-22.   Published online January 1, 2016
The activation energy of a material is an important factor that significantly affects the lifetime and can be used to develop a degradation model. In this study, a thermal analysis was carried out to evaluate and collect quantitative data on the degradation of insulation materials like EPR and CSP used for nuclear power plant cables. The activation energy was determined from the relationship between log β and 1/T based on the Flynn-Wall-Ozawa method, by a TGA test. The activation energy was also derived from the relationship between ln(t) and 1/T based on isothermal analysis, by an OIT test. The activation energy of EPR derived from thermal analysis was used to calculate the accelerated aging time corresponding to the number of years of use, employing the Arrhenius equation, and determine the elongation corresponding to the accelerated aging time.
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Thin Films and Sensors : Development of Pressure Sensor for Identifying Guinea Pig`s Large Intestinal Motility Caused by Drug
Jae Soon Park, Jung Ho Park, Eung Bo Kim, Sung Hwan Cho, Su Jeong Jang, Yeun Ho Joung
J Electr Electron Mater 2016;29(1):23-29.   Published online January 1, 2016
In this paper, in order to quantify the peristalsis occurrence in a guinea pig`s large intestine, a miniaturized air-gap capacitive pressure sensor was fabricated through micro-electro-mechanical system (MEMS). The proposed pressure sensor is a two-layered biocompatible polyimide substrate consisting of an air-gap capacitive plates between the substrates. The proposed pressure sensor was designed with a careful consideration of the structure and motility mechanism of the guinea pig`s large intestine. Artificial pellets were mounted on a prototype pressure sensor to provide some redundancies in the form of size and shape of the guinea pig feces. Capacitance of a prototype sensor was recorded to be 2.5 ~ 3 pF. This capacitance value was later converted to count value using a lab fabricated data conversion system. Sensitivity of the pressure sensor was recorded to be below 1 mmHg per atmospheric pressure. During in vivo testing, artificial peristalsis caused by drug injection was measured by inserting the prototype pressure sensor into the guinea pig’s large intestine and pressure data obtained due to artificial peristalsis was graphed using a labview program. The proposed pressure sensor could measure the pressure changes in the proximal, medial, and distal parts of the large intestine. The results of the experiment confirmed that pressure changes of guinea pig`s large intestine was proportional to the degree of drug injection.
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Control of Bowing in Free-standing GaN Substrate by Using Selective Etching of N-polar Face
Jin Won Gim, Ho Ki Son, Tea Young Lim, Mi Jai Lee, Jin Ho Kim, Young Jin Lee, Dae Woo Jeon, Jong Hee Hwang, Hae Yong Lee, Dae Ho Yoon
J Electr Electron Mater 2016;29(1):30-34.   Published online January 1, 2016
In this paper, we report that selective etching on N-polar face by EC (electro-chemical)-etching effect on the reduction of bowing and strain of FS (free-standing)-GaN substrates. We applied the EC-etching to concave and convex type of FS-GaN substrates. After the EC-etching for FS-GaN, nano porous structure was formed on N-polar face of concave and convex type of FS-GaN. Consequently, the bowing in the convex type of FS-GaN substrate was decreased but the bowing in the concave type of FS-GaN substrate was increased. Furthermore, the FWHM (full width at half maximum) of (1 0 2) reflection for the convex type of FS-GaN was significantly decreased from 601 to 259 arcsec. In the case, we confirmed that the EC-etching method was very effective to reduce the bowing in the convex type of FS-GaN and the compressive stress in N-polar face of convex type of FS-GaN was fully released by Raman measurement.
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Preparation and Characterization of Cy3 Dye for LCD Color Filter
Sang Dong Lee, Dong Kyoun Hyun, Yeon Tae Jeong
J Electr Electron Mater 2016;29(1):35-39.   Published online January 1, 2016
In this research, we focused on the improvement of cy3 dye’s characteristics for LCD color filter. Solubility and thermal stability are main characteristics of dyes for LCD color filter. We performed experiment to change counter cation of cy3 dyes with alkoxy substituent for these purposes. These cy3 dyes (1b∼5b) were prepared through the synthetic procedure of three steps. The synthesized new cy3 dyes were charaterized by using NMR, FT-IR, UV/Vis spectroscopy, and TGA. These cy3 dyes showed purple color and maximum absorption wavelength (λmax) in the range of 578∼590 nm in UV/Vis spectrum. We confirmed that solubility and thermal stability of cy3 dyes were dependent on the structure of counter cation. Cy3 dyes with alkoxy substituent have good solubility in organic solvents such as dichloromethane, methanol, and acetone. Especially, Cy3 dye with 4-nitrobenzyl counter cation (5b) gave excellent solubility characteristics.
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Fabrication of Transparent Color Coating Glass by Sol-gel Method
Jong Guk Park, Dae Woo Jeon, Mi Jai Lee, Tea Young Lim, Jong Hee Hwang, Jin Ho Kima
J Electr Electron Mater 2016;29(1):40-43.   Published online January 1, 2016
Transparent color coating films were fabricated on a glass substrate by using sol-gel hybrid binder and organic dye. Sol-gel hybrid binder coating film fabricated with PTMS of 0.03 mole showed a very high pencil hardness of 9 H. As the withdrawal speed increased from 1.0 mm/s to 5.0 mm/sec, The yellowness (b*) of coating glass also gradually increased. The transmittance of yellow color coating glass was 82.6% and the haze of coating glass was 0.35%. Red and blue color coating glasses also showed the high transmittance of 62.4% and 80.6% respectively. The surface hardness of color coating films was 6 H.
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High Voltage and Discharge Engineering : Partial Discharge Characteristics on Protrusion Defects in SF_{6}-N_{2} Mixture Gases
Hyang Eun Jo, Guo Ming Wang, Sun Jae Kim, Kyoung Soo Park, Gyung Suk Kila
J Electr Electron Mater 2016;29(1):44-49.   Published online January 1, 2016
Studies on a SF_{6}-mixture and -alternative gas has been in progress to reduce the use of SF_{6} gas as an insulation material of GIS (gas insulated switchgears). In this paper, we dealt with PD (partial discharge) characteristics in pure SF_{6} and N_{2}, and their mixtures on aspects of insulation design and risk assessment for GIS. A POC (protrusion on conductor) and a POE (protrusion on enclosure) as the major defects were fabricated to simulate PD. We analyzed the DIV (discharge inception voltage), DEV (discharge extinction voltage), pulse magnitude, counts and phase distribution of PD pulse in SF_{6}-N_{2} mixtures (SF_{6} 100%, SF_{6} 80%-N_{2} 20%, SF_{6} 50%-N_{2} 50%, SF_{6} 20%-N_{2} 80%, and N_{2} 100%) according to the IEC60270. The DIV, DEV as well as magnitude of PD pulse decreased on the POC as increase of N_{2} ratio. For the POE, the DIV and DEV in N_{2} ratio below 50% were the same voltages as those in SF_{6} 100%. In this experiment, SF_{6} 80%-N_{2} 20% mixture could be considered with the equivalent insulation performance to a GIS.
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High Voltage and Discharge Engineering : Partial Discharge Characteristics of XLPE According to Electrode Shape and Void
Jong Yeol Shin, Guin Sik Kim, Jin Woong Hong
J Electr Electron Mater 2016;29(1):50-57.   Published online January 1, 2016
Transmission equipment is mainly used for the XLPE (cross-linked polyethylene) insulation cable for ultra high voltage power to minimize power loss. The experiment examined the partial discharge characteristics according to the insertion of the bar electrode and needle electrode into the XLPE specimen and the air voids. XLPE insulation cable manufactured by T. company and tungsten electrode material by K. company were used for specimens, by adhering conductive tape on the semi-conductive material of the lower electrode of XLPE specimen with the dimension of 16×40×30 [mm] was used as negative electrode. In order to investigate the PD with φ-q-n of XLPE specimen according to the electrode shape and the size of air voids. we examined the PD by varying the voltage after applying voltage of 3~20 kV on the electrode. Therefore, it was confirmed from the result of PD characteristics of specimen that the larger the air void than the gap between electrode (+) and electrode(-), the larger effect on the discharge when the bar electrode and needle electrode inserted into XLPE, and the closer the distance between the insulation and the needle electrode, the faster insulation breakdown.
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Technology Education : Analysis of the Inner Degradation Pattern by Clustering Algorism at Distribution Line
Woon Shik Choi, Jin Sa Kim
J Electr Electron Mater 2016;29(1):58-61.   Published online January 1, 2016
Degradation in power cables used in distribution lines to the material of the wire, manufacturing method, but also the line of the environment, generates a variety of degradation depending upon the type of load. The local wire deterioration weighted wire breakage accident can occur frequently, causing significant proprietary damage can lead to accidents and precious. In this study, the signal detected by the eddy current aim to develop algorithms capable of determining the signals for the top part and at least part of the signal by using a signal processing technique called K-means algorithm.
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Light Source and Application Technology : 150 W LED Streetlight Optimal Design Using 21 W LED Engine
Wang Soo Shin, Seung Min Lee, Beom Su Kim, Dae Hee Park
J Electr Electron Mater 2016;29(1):62-67.   Published online January 1, 2016
In this paper, the IES file was measured by applying a secondary optical lens to a 21 W LED engine, and the lighting calculation software RELUX was used to perform simulations with the data file of this measurement. For two-lane (two way) concrete paved roads, six LED engine are applied to each streetlight and simulation results show that Uo (uniformity) 0.56, UI (longitudinal uniformity) 0.86 and TI (threshold iIncrement) 9% which satisfies the required standards. RELUX was also used to LED streetlights by designing them in three dimensions, that is ±25% of the arm length of 2.8 m standardized by the road lighting standards of the Korea Expressway Corporation. Comparative analysis was carried out on adjustments were made in increments of 0.1 m that Uo, UI, and TI values in the range of arm lengths from 2.1 m∼3.5 m. For the arm length range of 2.1 m∼2.4 m, Uo was high, whereas UI was low. Therefore, we present the optimal light distribution values designed for an arm length of 2.5 m.
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