Direct use of sunlight through the glass windows is an efficient way to reduce the energy consumption related to the heating, cooling, and lighting. Introduction of near-infrared modulating properties through colloidal doped metal oxide nanocrystals into the classical electrochromic materials accelerates the development of next-generation electrochromic devices. There has been a steady enhancement in the performance of electrochromic devices, necessitating a review of the recent progress in next-generation electrochromic devices employing doped metal oxide nanocrystals. This review provides an overview of the current developments in next-generation electrochromic smart windows utilizing colloidal doped metal oxide nanocrystals, with a focus on the key factors for achieving these advanced windows. Colloidal doped metal oxide nanocrystals are a crucial component in realizing and bringing to market the next generation of electrochromic windows, though further research and development are still required in this regard.

Lithium-ion batteries (LIBs) have attracted great attention as the common power source in energy storage fields of large-scale applications such as electrical vehicles (EVs), industries, power plants, and grid-scale energy storage systems (ESSs). Insertion, alloying, and conversion reactions are the main electrochemical energy storage mechanisms in LIBs, which determine their electrochemical properties and performances. The electrochemical reaction mechanisms are determined by several factors including crystal structure, components, and composition of electrode materials. This article reviews a new strategy to compensate for the intrinsic shortcomings of each reaction mechanism by introducing the material systems to form a single compound with different types of reaction mechanisms and to allow the simultaneous hybrid electrochemical reaction of two different mechanisms in a single solid solution phase.

Aluminum-induced crystallization (AIC) as a route to reduce the fabrication cost and to obtain polycrystalline Si (p- Si) thin-film of large grain size is a promising alternative of single-crystalline (s-Si) substrate or p-Si thin-film obtained by conventional methods such as solid phase crystallization (SPC) and laser-induced crystallization (LIC). As the AIC process occurs at the interface between a-Si and Al thin-films, there are various process and interface parameters. Also, it directly means that there is a certain parametric window to obtain p-Si of large grain size having uniform crystal orientation. In this article, we investigate the effect of the various process and interface parameters to obtain p-Si of large grain size and uniform crystal orientation from the literature review. We also suggest the potential use of the p-Si as a virtual substrate for the growth of various compound semiconductors in a form of low-dimension as well as thin-film as a way for their monolithic integration on Si.

Roll-to-roll processing holds an integral position within the manufacturing landscape, and its significance reverberates across numerous industries. This versatile technology platform encompasses a diverse array of process methods and accommodates a wide spectrum of material categories, making it a cornerstone of modern production. Within this expansive domain, two commonly employed coating techniques, namely the slot die and gravure coating methods, have earned their prominence for their precision and efficiency in delivering flawless coatings. Additionally, the realm of drying processes relies heavily on thermal drying, infrared (IR) drying, and ultraviolet (UV) drying methods to expedite the transformation of materials from their liquid or semi-liquid states to solid, ready-to-use products. The undeniable importance of roll-to-roll processing lies in its ability to streamline manufacturing processes, reduce costs, and enhance product quality. This article embarks on a comprehensive journey to fathom the depth of this importance by delving into the intricacies of these common roll-to-roll process methods. Through rigorous research and meticulous data collection, we aim to shed light on the pivotal role these techniques play in shaping various industries and advancing the world of manufacturing. By understanding their significance, we can harness the full potential of roll-to-roll processing and pave the way for innovation and excellence in production.

The size of semiconductor devices has been scaled down to improve packing density and output performance. However, there is uncontrollable spreading of the dopants that comprise the well, punch-stop, and channel-stop when using hightemperature annealing processes, such as rapid thermal annealing (RTA). In this context, low-temperature deuterium annealing (LTDA) performed at a low temperature of 300℃ is proposed to reduce the thermal budget during CMOS fabrication. The LTDA effectively eliminates the interface trap in the gate dielectric layer, thereby improving the electrical characteristics of devices, such as threshold voltage (VTH), subthreshold swing (SS), on-state current (ION), and off-state current (IOFF). Moreover, the LTDA is perfectly compatible with CMOS processes.

The changes in threshold voltage and DIBL were investigated for changes in remanent polarization P_r and coercive field E_c, which determine the characteristics of the P-E hysteresis curve of ferroelectric in NCFET (negative capacitance FET). The threshold voltage and DIBL (drain-induced barrier lowering) were observed for a junctionless double gate MOSFET using a gate oxide structure of MFMIS (metal-ferroelectric-metal-insulator-semiconductor). To obtain the threshold voltage, seriestype potential distribution and second derivative method were used. As a result, it can be seen that the threshold voltage increases when P_r decreases and E_c increases, and the threshold voltage is also maintained constant when the P_r/E_c is constant. However, as the drain voltage increases, the threshold voltage changes significantly according to P_r/E_c, so the DIBL greatly changes for P_r/E_c. In other words, when P_r/E_c=15 pF/cm, DIBL showed a negative value regardless of the channel length under the conditions of ferroelectric thickness of 10 nm and SiO₂ thickness of 1 nm. The DIBL value was in the negative or positive range for the channel length when the P_r/E_c is 25 pF/cm or more under the same conditions, so the condition of DIBL=0 could be obtained. As such, the optimal condition to reduce short channel effects can be obtained since the threshold voltage and DIBL can be adjusted according to the device dimension of NCFET and the P_r and E_c of ferroelectric.

By introducing curing kinetics and chemo-rheology for the epoxy resin formulation for ultra-high voltage gas insulated switchgear (GIS) Insulating Spacers, a study was conducted to simulate the curing behavior, flow and warpage analysis for optimization of the molding process in automatic pressure gelation. The curing rate equation and chemo-rheology equation were set as fixed values for various factors and other physical property values, and the APG molding process conditions were entered into the Moldflow software to perform optimization numerical simulations of the three-phase insulating spacer. Changes in curing shrinkage according to pack pressure were observed under the optimized process conditions. As a result, it was confirmed that the residence time in the solid state was shortened due to the lowest curing reaction when the curing holding pressure was 3 bar, and the occurrence of deformation due to internal residual stress was minimized.

In this study, we successfully synthesized copper oxide (Cu₂O) particles through a hydrothermal method at a relatively low temperature (150℃). The synthesis involved the precise control of molar concentrations of NaOH. Notably, Cu₂O particles were effectively synthesized when NaOH concentrations of 0.15 M and 0.20 M were utilized. While attempts were made at different molar concentrations, the synthesis of pure Cu₂O particles was only achieved at concentrations of 0.15 M and 0.20 M. In this experimental investigation, Cu₂O synthesized under these specific conditions exhibited absorption characteristics within the wavelength range of 640 to 570 nm, consistently exhibiting a band gap energy of 1.9 eV. These Cu₂O particles, characterized by their small band gap energy and straightforward synthetic method, hold significant promise for various applications including semiconductors and solar cells.

In this study, the praseodymium-doped yttrium phosphate (YPO₄:Pr³⁺) powder, which is well known for its high luminescent efficiency, and long life in the UV range, was synthesized with various content ratios of Pr₆O₁₁ and calcination temperature. Crystal structure and luminescent properties of various phosphor powders based on different concentrations and calcination conditions were characterized by XRD (X-Ray Diffraction) and PL (photoluminescence) spectrometers. From the XRD analysis, the structure of YPO₄:Pr³⁺ which is calcinated at 1,200℃ was stable tetragonal phase and crystal size was calculated about 25 nm by Scherrer equation. PL emission of YPO4:Pr3+ with a different content ratio of Pr6O11 by excitation λexc=250 nm shows that 0.75 mol% phosphor powder has maximum PL intensity and PL decreases with the increase of the ratio of Pr₆O₁₁ up to 1.25 mol% which is caused by changes of crystallinity of phosphor powders. With increasing dopant ratio, photoluminescence Emission decreases due to Concentration quenching, which is commonly observed in phosphors. Currently, 0.75 mol% is considered the optimal doping concentration. A hybrid ultraviolet-emitting device incorporating YPO4:Pr3+ fluorescent material with plasma discharge was fabricated to enhance UV germicidal effects while minimizing ozone generation. UV emission from the plasma discharge device was shown at about 200 nm and 350 nm which caused additional emission of the regions of 250 nm, 315 nm, and 370 nm from the YPO₄:Pr³⁺ phosphor.

We have studied the effects of Ag on the characteristics of Sn₄₈In₅₂Ag_x (wt%) low-melting solders for photovoltaic ribbons. The Sn₄₈In₅₂ (wt%) solder coexisted in the InSn₄ and In₃Sn alloys. Ag atoms added in the solder formed an AgIn₂ alloy by reacting with some part of In atoms, while they did not react with Sn atoms. The addition of Ag atoms in the Sn₄₈In52Agx (wt%) solders showed useful results; an increase in peel strength and a decrease in melting temperature. The peel strength of the ribbon plated with the Sn⁴⁸In⁵² (wt%) solder was 53.6 N/mm², and that of the Sn⁴⁸In⁵²Ag1 (wt%) solder largely increased to 125.1 N/mm². In the meanwhile, the melting temperature of the Sn₄₈In⁵² (wt%) solder was 119.2℃, and that of the Sn48In52Ag1 (wt%) solder decreased to 114.0℃.

This paper is a study on the optimal microdroplet generation conditions in indirect charging electrostatic spraying. Unlike the direct charging method, which applies power to the nozzle, the indirect charging method applies power to the discharge electrode between the nozzle and the collection electrode. Therefore, an electrically simplified system can be obtained by minimizing the insulation part a stable spray pattern can be obtained with a wide spray angle, and a stable spray pattern can be obtained with a wide spray angle. To conduct the study, an indirect charging type electrostatic spray visualization system was constructed and the static characteristics of the microdroplets were analyzed through image processing of the spray shape of the microdroplets. The total number of microdroplets and the number of microdroplets per power consumption are confirmed according to the changes in the distance between the discharge electrode and the collection electrode, the flow rate, and the applied voltage, which affect the generation of microdroplets, and using this, the optimal generation conditions are derived and the corresponding microdroplet size distribution was analyzed. As a result of the experiment, it was confirmed that the optimal generation condition was at a flow rate of 15 to 20 mL/min and a voltage of -22.5 to -25 kV in terms of the number of microdroplets, and at a flow rate of 15 to 20 mL/min and a voltage of -20 kV in terms of energy consumption efficiency.

To evaluate the possibility as a multi-level memory medium for the Ge2Sb2Te5/TiN/W-doped Ge2Sb2Te5 cell structure, the crystallization rate and stabilization characteristics according to voltage (V)- and current (I)- pulse sweeping were investigated. In the cell structures prepared by a magnetron sputtering system on a p-type Si (100) substrate, the Ge2Sb2Te5 and W-doped Ge2Sb2Te5 thin films were separated by a barrier metal, TiN, and the individual thicknesses were varied, but the total thickness was fixed at 200 nm. All cell structures exhibited relatively stable multi-level states of high-middle-low resistance (HR-MR-LR), which guarantee the reliability of the multilevel phase-change random access memory (PRAM). The amorphousto- multilevel crystallization rate was evaluated from a graph of resistance (R) vs. pulse duration (T) obtained by the nanoscaled pulse sweeping at a fixed applied voltage (12 V). For all structures, the phase-change rates of HR→MR and MR→LR were estimated to be approximately t<20 ns and t<40 ns, respectively, and the states were relatively stable. We believe that the doublestack structure of an appropriate Ge-Sb-Te film separated by barrier metal (TiN) can be optimized for high-speed and stable multilevel PRAM.

Recently, as interest in personal hygiene has increased due to the community spread of COVID-19 and variant viruses, fixed and potable UV germicidal equipment to sterilize indoor spaces and hand-held UV germicidal equipment to sterilize household items such as masks and mobile phones are continuously being developed and sold. However, the development and sales of the product are difficult because appropriate testing methods have not yet been established. In this situation, if an uncertified product is distributed in the market, it can cause serious harm to consumers. In this study, we investigate the photobiological risks and safety devices against UV exposure of UV germicidal equipment distributed domestically, and propose appropriate test methods for portable UV germicidal equipment based on the research results.

4H-SiC power metal-oxide-semiconductor field effect transistors (MOSFETs) have been developed to achieve lower specific-on-resistance (R_on,sp), and the gate oxides have been thermally grown. The poor channel mobility resulting from the high interface trap density (D_it) at the SiO₂/4H-SiC interface significantly affects the higher switching loss of the power device. Therefore, the development of novel fabrication processes to enhance the quality of the SiO₂/4H-SiC interface is required. In this paper, NO post-oxidation annealing (POA) by using the conditions of N₂ diluted NO at a high temperature (1,300℃) is proposed to reduce the high interface trap density resulting from thermal oxidation. The NO POA is carried out in various NO ambient (0, 10, 50, and 100% NO mixed with 100, 90, 50, and 0% of high purity N₂ gas to achieve the optimized condition while maintaining a high temperature (1,300℃). To confirm the optimized condition of the NO POA, measuring capacitance-voltage (C-V) and current-voltage (I-V), and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) are employed. It is confirmed that the POA condition of 50% NO at 1,300℃ facilitates the equilibrium state of both the oxidation and nitridation at the SiO₂/4H-SiC interface, thereby reducing the Dit.

A triboelectric nanogenerator is a promising energy harvester operated by the combined mechanism of electrostatic induction and contact electrification. It has attracting attention as eco-friendly and sustainable energy generators by harvesting wasting mechanical energies. However, the power generated in the natural environment is accompanied by low frequencies, so that the output power under such input conditions is normally insufficient amount for a variety of industrial applications. In this study, we introduce a non-contact rotational triboelectric nanogenerator using pedaling and gear systems (called by P-TENG), which has a mechanism that produces high power by using rack gear and pinion gear when a large force by a pedal is given. We design the system can rotate the shaft to which the rotor is connected through the conversion of vertical motion to rotational motion between the rack gear and the pinion gear. Furthermore, the system controls the one directional rotation due to the engagement rotation of the two pinion gears and the one-way needle roller bearing. The TENG with a 2 mm gap between the rotor and the stator produces about the power of 200 __ and turns on 82 LEDs under the condition of 800 rpm. We expect that P-TENG can be used in a variety of applications such as operating portable electronics or sterilizing contaminated water.

The Internet of Things (IoT) device is a key component for Industry 4.0, which is the network in homes, factories, buildings, and infrastructures to monitor and control the systems. To demonstrate the IoT network, batteries are widely utilized as power sources, and the batteries inevitably require repeated replacement due to their limited capacity. Magneto-mechanoelectric (MME) generators are one of the candidate to develop self-powered IoT systems since MME generators can harvest electricity from stray alternating current (AC) magnetic fields arising from electric power cables. Herein, we report a magnetomechano- triboelectric generator enabled by a ferromagnetic-ferroelectric composite. In the triboelectric nylon matrix, a ferromagnetic carbonyl iron powder (CIP) was introduced to induce magnetic force near the AC magnetic field for MME harvesting. Additionally, a ferroelectric ceramic powder was also added to the MME composite material to enhance the chargetrapping capability during triboelectric harvesting. The final ferromagnetic-ferroelectric composite-based MME triboelectric harvester can generate an open-circuit voltage and a short-circuit current of 110 V and 8 μA, respectively, which were enough to turn on a light emitting diode (LED) and charge a capacitor. These results verify the feasibility of the MME triboelectric generator for not only harvesting electricity from an AC magnetic field but also for various self-powered IoT applications.