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Keywords
Electrical property (2)
Electromechanical coupling factor (2)
JFET (2)
Junction (2)
Resistivity (2)
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Authors
C. J. Choi (2)
Youn Woo Hong (2)
Yeong Ho Jeong (2)
Jong Hee Kim (2)
Jin Ho Kim (2)
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Keywords
Electrical property (2)
Electromechanical coupling factor (2)
JFET (2)
Junction (2)
Resistivity (2)
Rf-magnetron sputtering (2)
SiGe (2)
SILVACO (2)
TCO film (2)
ZnO (2)
(Na (1)
Annealing (1)
Bank Layer (1)
BCP Materials (1)
BNT (1)
Conductive mechanism (1)
Cr2O3 (1)
Defect (1)
Dielectric constant (1)
Dielectric functions (1)
Diffusion (1)
Energy harvesting (1)
Evaporation (1)
Fowler-nordheim region (1)
Grain boundary (1)
I-V-L (1)
Impedance and modulus spectroscopy (1)
Inkjet printing (1)
ionic p-i-n structure (1)
ITO (1)
K)NbO3 (1)
LCP (1)
Lead-free ceramics (1)
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OLED (1)
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Si (1)
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authors
C. J. Choi (2)
Youn Woo Hong (2)
Yeong Ho Jeong (2)
Jong Hee Kim (2)
Jin Ho Kim (2)
Hwa Min Kim (2)
B. G. Park (2)
K. H. Shim (2)
Hyo Soon Shin (2)
H. D. Yang (2)
Dong Hun Yeo (2)
Ju Hyun Yoo (2)
Kang Bae (1)
Jung Ho Cho (1)
Byung Hyun Choi (1)
Soon Nam Chu (1)
Myoung Pyo Chun (1)
Mi Young Han (1)
Jae Suk Hong (1)
Jin Woong Hong (1)
Soon Wook Jeong (1)
Seung Hun Ji (1)
Sung Hoo Ju (1)
J. Y. Kim (1)
Tae Seon Kim (1)
Do Hyung Kim (1)
Jung Taek Kim (1)
Weon Jong Kim (1)
Sang Woo Kim (1)
Se Min Kim (1)
Sam Dong Lee (1)
Sang Woo Lee (1)
Suk Burm Mah (1)
Chul Hong Min (1)
Sahn Nahm (1)
Joong Hee Nam (1)
Seung Seok Oh (1)
Kyeong Kap Paek (1)
Myoung Sung Park (1)
Byoung Choo Park (1)
Jong Seung Park (1)
Jung Cheul Park (1)
Byeong Ho Seo (1)
Kyung Sik Shin (1)
Sun Young Sohn (1)
Chung Kun Song (1)
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Previous issues
Volume 22(11); November 2009
Electrical Properties of JFET using SiGe/Si/SiGe Channel Structure
B. G. Park, H. D. Yang, C. J. Choi, J. Y. Kim, K. H. Shim
J Korean Inst Electr Electron Mater Eng
2009;22(11):905-909.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.905
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34
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Comparison Study on Electrical Properties of SiGe JFET and Si JFET
B. G. Park, H. D. Yang, C. J. Choi, K. H. Shim
J Korean Inst Electr Electron Mater Eng
2009;22(11):910-917.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.910
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36
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0
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Design of Micro-structured Small Scale Energy Harvesting System for Pervasive Computing Applications
Chul Hong Min, Tae Seon Kim
J Korean Inst Electr Electron Mater Eng
2009;22(11):918-924.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.918
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32
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0
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Dielectric and Piezoelectric Characteristics of 0.95(K0.5Na0.5)NbO3-0.05Li(Sb0.8Nb0.2)O3 Pb-free Ceramics with amount of Ag2O Addition
Do Hyung Kim, Ju Hyun Yoo, Yeong Ho Jeong
J Korean Inst Electr Electron Mater Eng
2009;22(11):925-929.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.925
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30
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Dielectric and Piezoelectric Properties of (K,Na)NbO3 Ceramics with the amount of K4CuNb8O23 Addition
Byeong Ho Seo, Ju Hyun Yoo, Suk Burm Mah, Yeong Ho Jeong
J Korean Inst Electr Electron Mater Eng
2009;22(11):930-934.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.930
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35
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Preparation and Dielectric Properties of Ceramic(BNT)-Polymer(LCP) Composite
Myoung Sung Park, Myoung Pyo Chun, Jung Ho Cho, Joong Hee Nam, Byung Hyun Choi, Sahn Nahm
J Korean Inst Electr Electron Mater Eng
2009;22(11):935-940.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.935
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27
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Sintering and Electrical Properties of Ni-doped ZnO-Bi2O3-Sb2O3
Youn Woo Hong, Hyo Soon Shin, Dong Hun Yeo, Jong Hee Kim, Jin Ho Kim
J Korean Inst Electr Electron Mater Eng
2009;22(11):941-948.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.941
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29
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Defects and Grain Boundary Properties of Cr-doped ZnO
Youn Woo Hong, Hyo Soon Shin, Dong Hun Yeo, Jong Hee Kim, Jin Ho Kim
J Korean Inst Electr Electron Mater Eng
2009;22(11):949-955.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.949
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41
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Luminescent Properties of OLED Devices with Various Substrate Temperatures
Jung Taek Kim, Kyeong Kap Paek, Sung Hoo Ju
J Korean Inst Electr Electron Mater Eng
2009;22(11):956-960.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.956
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31
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Out Gassing from Plastic Substrates Affect on the Electrical Properties of TCO Films
Hwa Min Kim, Seung Hun Ji
J Korean Inst Electr Electron Mater Eng
2009;22(11):961-968.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.961
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36
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Electrical and Optical Properties of SiO2-doped ZnO Films Prepared by Rf-magnetron Sputtering System
Kang Bae, Sun Young Sohn, Hwa Min Kim, Jae Suk Hong
J Korean Inst Electr Electron Mater Eng
2009;22(11):969-973.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.969
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42
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Solution Processable ionic p-i-n OLEDs
Mi Young Han, Seung Seok Oh, Byoung Choo Park
J Korean Inst Electr Electron Mater Eng
2009;22(11):974-979.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.974
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29
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Influence of the Optical Characteristics and Conductive Mechanism depending on the Deposition Condition of BCP
Weon Jong Kim, Jin Woong Hong
J Korean Inst Electr Electron Mater Eng
2009;22(11):980-986.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.980
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34
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Morphology Control of ZnO Nanorods on ITO Substrates in Solution Processes
Kyung Sik Shin, Sam Dong Lee, Soon Wook Jeong, Sang Woo Lee, Sang Woo Kim
J Korean Inst Electr Electron Mater Eng
2009;22(11):987-991.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.987
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42
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Organic TFTs using PVP Bank and TIPS-Pentacene Semiconductor Layer patterned by Ink Jet Printing
Se Min Kim, Jong Seung Park, Chung Kun Song
J Korean Inst Electr Electron Mater Eng
2009;22(11):992-998.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.992
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27
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A Study on the Electrical and Optical Properties of CdS Thin Film by Annealing for Solar Cell
Jung Cheul Park, Soon Nam Chu
J Korean Inst Electr Electron Mater Eng
2009;22(11):999-1003.
Published online November 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.11.999
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29
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