In this paper, in order to suppress unwanted current paths originating from adjacent cells in a passive crossbar array based on resistive random access memory (RRAM) without extrinsic switching devices, 1-diode type RRAM which consists of a 0.2% chromium-doped strontium titanate (Cr-SrTiO3) film deposited on a silicon substrate, was proposed for high packing density, and intrinsic rectifying characteristics from the current versus voltage characteristics were successfully demonstrated.

An operation temperature of Pb(Zr,Ti)O3 based piezoelectric ultrasonic flowmeter was generally restricted to below 200˚C due to a low depoling temperature of its ceramic material. Thus, a new designed piezoelectric ultrasonic flowmeter was fabricated in order to protect from the extremely hot fluid. Its structure is optimized by a finite element method to effectively stop heat flowing along a waveguide. Various materials such as Cu, Al, SUS were examined as a multi-plate radiation shield to enhance the performance of piezoelectric ultrasonic flowmeter. The SUS was evaluated as the most effective material to enhance the performance of piezoelectric ultrasonic flowmeter. As the number of plates of the radiation shield increased, the temperature at piezoelectric transducer away from the hot fluid was constantly decreased with a ratio of 3.12˚C per the plate number.

A cantilever-type piezoelectric generator has advantages of simple structure, ease of fabrication and large displacement by transverse vibration of a beam. It is easy to control the natural frequency, and also possible to increase the output power by changing the length, width, and thickness of the generator. In particular, the length increases, the natural frequency sharply decreases, and vice versa. Hence, the natural frequency can widely be controlled by using change in the length of elastic body. In this paper, the generator was designed and fabricated to change natural frequency using the slides of the case. In addition, the generating characteristics were confirmed through finite element analyses and vibration experiment. As a result, the maximum output characteristics could be generated due to resonance phenomenon although any frequency of external force was applied.

The (Na0.52K0.44)(Nb0.9Sb0.06)O3-0.04dLiTaO3 (NKNS-LT) ceramics with various Cu2O concentration were prepared by the conventional solid state reaction method. The Cu2O content was varied in the range of 0.1~0.4 wt%. The effects of Cu on microstructure, crystallographic phase transition, and piezoelectric properties were investigated. The material with perovskite structure had a tetragonal phase (T1) when Cu2O concentration was less than 0.3 wt% and it transformed to another tetragonal phase (T2) when the Cu2O amount was greater than 0.3 wt%. The phase boundary between T1 and T2 phases appeared at around 0.3 wt% of Cu2O concentration. The piezoelectric properties were shown the maximum values at the composition of the phase boundary. The electro-mechanical coupling factor (kp) was 0.42 and the piezoelectric charge constant (d33) was 245 pC/N at the 0.3 wt% of Cu2O concentration.

The sintering, defect and grain boundary characteristics of Bi-based ZnO chip varistor (1,608 mm size) have been investigated to know the possibility of lowering a manufacturing price by using 100 % Ag inner-electrode. The samples were prepared by general multilayer chip varistor process and characterized by shrinkage, SEM, current-voltage (I-V), admittance spectroscopy (AS), impedance and modulus spectroscopy (IS & MS) measurement. There are no problems to make a chip varistor with 100% Ag inner-electrode in the sintering temperature range of 850∼900℃ for 1 h in air. A good varistor characteristics (Vn= 9.3∼15.4 V, a= 23∼24, IL= 1.0∼1.6 μA) were revealed but formed Zn(i)·· (0.209 eV) as dominant defect, and increased the distributional inhomogeneity and the temperature instability in grain boundary barriers.

In this study, we have investigated the effects of Co doping on I-V curves, bulk trap levels and grain boundary characteristics of ZnO-Bi2O3 (ZB) varistor. From I-V characteristics the nonlinear coefficient (a) and the grain boundary resistivity (ρgb) decreased as 32→22 and 18.4→0.6×10(9) Ωcm with sintering temperature (900∼1,300℃), respectively. Admittance spectra and dielectric functions show two bulk traps of zinc interstitial, Zn(i)·· (0.16∼0.18 eV) and oxygen vacancy, Vo· (0.28∼0.33 eV). The barrier of grain boundaries in ZBCo (ZnO-Bi2O3-Co3O4) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.93 eV at the 460∼580 K to 1.13 eV at the 620∼700 K. It is revealed that Co dopant in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against the ambient temperature.

In this thesis, the silicone filler with a sample size of 0∼75 phr and void size of 2∼4.5 mm is prepared in order to diagnose the defect of void which exists in widely used insulation material, silicone rubber. In this silicone rubber sample, electrodes are connected and whilst the voltage changes, applied voltage 7 kV∼9 kV is increased constantly over time and discharge quantity, discharge frequency and applied voltage (T-QNV) were measured. The discharge quantity of the applied voltage (VQ) is measured to estimate inception voltage and extinction voltage. In addition, under the condition of maintaining constant applied voltage, discharge quantity and discharge frequency (QN) are measured, and its characteristics are analyzed.

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/SiO2/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as Bi2Fe4O3. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 μC/cm2.

In this paper, we investigated an anomalous hump phenomenon under the positive bias stress in p-type LTPS TFTs. The devices with inferior electrical performance also show larger hump phenomenon. which can be explained by the sub-channel induced from trapped electrons under thinner gate oxide region. We can confirm that the devices with larger hump have larger interface trap density (Dit) and grain boundary trap density (Ntrap) extracted by low-high frequency capacitance method and Levinson-Proano method, respectively. From the C-V with I-V transfer characteristics, the trapped electrons causing hump seem to be generated particularly from the S/D and gate overlapped region. Based on these analysis, the major cause of an anomalous hump phenomenon under the positive bias stress in p-type poly-Si TFTs is explained by the GIDL occurring in the S/D and gate overlapped region and the traps existing in the channel edge region where the gate oxide becomes thinner, which can be inferred by the fact that the magnitude of the hump is dependent on the average trap densities.

To study encapsulation method for large-area organic light emitting diodes (OLEDs), red emitting OLEDs were fabricated, on which LiF and Al were deposited as inorganic protective films. And then the OLED was attached to flat glass by printing method using epoxy. In case of direct coating of epoxy onto OLED by printing method, luminance and current efficiency were remarkably decreased because of the damage to the OLED by epoxy. In case of depositing LiF and Al as inorganic protective films and then coating of epoxy onto OLED, luminance and current efficiency were not changed. OLED lifetime was more increased through inorganic protective films between OLED and flat glass than that without any encapsulation (8.8 h), i.e., 47 (LiF/Al/epoxy/glass), 62 (LiF/Al/LiF/epoxy/glass), and 84 h (LiF/Al/Al/epoxy/glass). The characteristics of OLED encapsulated with inorganic protective films (attached to flat glass) showed the possibility of application of protective films.

We optimize electrical and optical properties of thermal and SF6 plasma treated indium tin oxide (ITO)/Al based reflector for high-power ultraviolet (UV) light-emitting diodes (LEDs). After thermal and SF6 plasma treatments of ITO/Al reflector, the specific contact resistance decreased from 1.04×10(-3) Ω·cm2 to 9.12×10(-4) Ω·cm2, while the reflectance increased from 58% to 70% at the 365 nm wavelength. The low resistance and high reflectance of ITO/Al reflector are attributed to the reduced Schottky barrier height (SBH) between the ITO and AlGaN by large electronegativity of fluorine species and reduced interface roughness between the ITO and Al, respectively.

We analyzed various forces affective to the charged particles in closed space, to explain the image degradation and lifetime-shortening phenomena because of particle lumping which is one of the serious problems in reflective displays. It is possible to predict the quantity of q/m which is the most important parameter in determining the optical and electrical characteristics, by calculating the image force and kinetic energy. For stable driving, the quantity of q/m must be in the defined range but it changes during the fabrication process, so we added the filtering process to solve this problem and obtained the well-defined nonlinear driving voltage coinciding with the threshold voltage. And we obtained the fully-driving property which prevents the particle lumping and decides the image quality and lifetime of panel from the optical characteristics and occupation surface of moving particles.

ZnO crystals with belt and comb shapes were synthesized without any catalysts through a simple thermal oxidation of ZnS powder in alumina crucible under air atmosphere. X-ray diffraction (XRD) pattern revealed that the ZnO crystals had wurtzite structure of hexagonal phase. Energy dispersive x-ray (EDX) spectra showed that the ZnO was of high purity. In the cathodoluminescece spectra obtained for the ZnO crystals with belt and comb shapes, a strong ultraviolet emission centered at 380nm was observed, which indicates the ZnO crystal has high crystalline quality.

Perovskite niobates and tantalates have been placed on a short list of functional materials for future technologies. This article was investigated ferroelectric materials Ag(Ta,Nb)O3 thick film. In this study, we have fabricated the Ag(Ta,Nb)O3 thick film on the Al2O3 substrates by screen printing method. The Ag(Ta,Nb)O3 thick film were fabricated by the mixed oxide method. The sintering temperature and time were 1,150℃, 2 hr. The electrical properties of Ag(Ta,Nb)O3 thick film were investigated at 30∼100℃.

The adsorption kinetic study of ruthenium complex, N3, onto nanoporous titanium dioxide (TiO2) photoanodes has been carried out by measuring dye uptake in-situ. Three simplified kinetic models including a pseudo first-order equation, pseudo second-order equation and intraparticle diffusion equation were chosen to follow the adsorption process. Kinetic parameters, rate constant, equilibrium adsorption capacities and related coefficient coefficients for each kinetic model were calculated and discussed. It was shown that the adsorption kinetics of N3 dye molecules onto porous TiO2 obeys pseudo second-order kinetics with chemisorption being the rate determining step. Additionally the heterogeneous surface and the pore size distribution of porous TiO2 adsorbents were also discussed.