A new water energy harvester module, which is composed of piezoelectric bimorph cantilevers, harvesting circuit and a shaft with 16 impellers at a center axis, was fabricated for energy harvesting application. High energy density Pb(Zr0.54Ti0.46)O3 + 0.2 wt% Cr2O3 + 1.0 wt% Nb2O5 (PZT-CN) thick film obtained by tape casting method was used for the bimorph cantilever. The PZT-CN bimorph cantilever with a proof mass of 49 g exhibited extremely high output power of 22.5 mW (24 mW//cm3) at resonance frequency of 11 Hz. In addition, the fabricated water energy harvester has a cylindrical structure with 48 bimorph cantilevers clamped at inner surface. A significantly high output power of 433 mW was obtained at a rotation speed of 120 rpm with a resistive load of 500 Ω for the water energy harvester.

The K-PCS and W-CDMA dual band dielectric duplexer and bandpass filters have been designed and fabricated. The dual band duplexer consists of the separate monoblock K-PCS and W-CDMA duplexers using common antenna port. The coupling capacitance and I/O impedance matching have been designed to minimize the cross interference between the bands. Isolations of crosspoint between Tx and Rx in K-PCS and W-CDMA dualband were about 47 dB and 100 dB, respectively. On the other hand, isolations of Tx and Rx in K-PCS and W-CDMA were about 66 dB and 65 dB, respectively. The difference between 47 dB and 100 dB originated from the different center frequencies in Tx and Rx of K-PCS and W-CDMA bands. The coupling capacitance of the bandwidth, I/O capacitance of I/O matching and impedance matching, and various capacitances were important role to fabricate the dielectric duplexer and bandpass filters.

We fabricated piezoelectric unimorph cantilever generators (UCG) using Pb(Zr0.54Ti0.46)O3 + 0.2 wt% Cr2O3 + 1.0 wt% Nb2O5 (PZCN) piezoelectric thick films, which were produced by a tape casting method. The PZCN thick films were tailored with same width and thickness but different lengths from 7.7 to 57.7 mm in order to evaluate optimized UCG for energy harvesting device applications. When the length of PZCN film was increased, the resonance frequency of UCG was slightly increased from 7 Hz to 8 Hz, which could be due to enlarged area of the highly stiff piezo-ceramic film. However, the output power was proportionally increased with the length of PZCT film and it reached 4.68 mW (1.221 mW/cm3) when the film`s length was 57.7 mm under 25 g of tip mass at 8 Hz, which is sufficient for micro-scale device applications.

In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-Bi2O3 (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of Zn ·· (0.17∼0.18 eV) and V· (0.30∼0.33 eV). From J-E characteristics the nonlinear coefficient (α) and resistivity (ρgb) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 GΩcm with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) (ZnO-Bi2O3-Mn3O4-Co3O4) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (α-factor= 0.136).

AlN thin films were deposited on p-type Si(100) substrates by RF magnetron sputtering method. This study showed the change of the preferential orientation of AlN thin films deposition with the change of the deposition conditions such as sputtering pressure and Ar/N2 gas ratio in chamber. It was identified by X-ray diffraction patterns that AlN thin film deposited at low sputtering pressure has a (002) orientation, however its preferred orientation was changed from the (002) to the (100) orientation with increasing sputtering pressure. Also, it was observed that the properties of AlN thin films such as thickness, grain size and surface roughness were largely dependent on Ar/N2 gas ratio and a high quality thin film could be prepared at lower nitrogen concentration. AlN thin films were investigated relationship between preferential orientation and deposition condition by using XRD, FE-SEM and PFM.

The effect of Cu coating on the sensing properties of nano SnO2:Cu based sensors for the CH4, CH3CH2CH3 gas was studied. This work was focussed on investigating the change of sensitivity of nano SnO2:Cu based sensors for CH4, CH3CH2CH3 gas by Cu coating. Nano sized SnO2 powders were prepared by solution reduction method using stannous chloride(SnCl2·2H2O), hydrazine(N2H2) and NaOH and subsequent heat treatment. XRD patterns showed that nano SnO2 powders with rutile structure were grown with (110), (101), (211) dominant peak. The particle size of nano SnO2:Cu powders at 8 wt% Cu was about 50 nm. SnO2 particles were found to contain many pores, according to SEM analysis. The sensitivity of nano SnO2:Cu based sensors was measured for 5 ppm CH4 gas and CH3CH2CH3 gas at room temperature by comparing the resistance in air with that in target gases. The sensitivity for both CH4 and CH3CH2CH3 gases was improved by Cu coating on the nano SnO2 surface. The response time and recovery time of the SnO2:Cu gas sensors for the CH4 and CH3CH2CH3 gases were 18∼20 seconds, and 13∼15 seconds, respectively.

We proposed the ZnO thin film for a SAW filter by PLD and RF sputtering method. ZnO thin films was pre-deposited on a sapphire substrate as a seed layer by PLD method and then deposited on seed layer by RF sputtering. The surface characteristics of ZnO thin film were investigated by XRD, SEM and AFM. The minimum surface roughness was 1.92 nm and FWHM of rocking curve was 0.92°. We demonstrated the SAW filter with bandwidth of approximately 0.97 ㎒ and the center frequency of 18.72 ㎒ using the proposed ZnO thin film.

We have investigated the structural, electrical and optical properties of Ga-doped ZnO (GZO) thin films prepared by RF magnetron sputtering with laboratory-made ZnO targets containing 1, 3, 5, 7 wt% of Ga2O3 powder as a doping source. The GZO thin films show the typical crystallographic orientation with c-axis regardless of Ga2O3 content in the targets. The 3,000 Å thick GZO thin films with the lowest resistivity of 7×10-4 Ω·cm are obtained by using the GZO (Ga2O3= 5 wt%) target. Optical transmittance of all films shows higher than 80% at the visible region. The optical energy band gap for GZO films increases as the carrier concentration (ne) in the film increases.

A piezoelectric ultrasonic bone surgical instrument, usually used to remove the tartar out of teeth or to cut the dentine of the tooth, is a recently popular instrument for dental treatment due to its several merits such as small size, low-electric power and precision control of surgical operation. It has typically two parts of a tip and vibration system which is also composed of head, piezoelectric elements and tail-mass. In order to improve the performance of the instrument, it is important to standardize the size of the vibration system without tip for high performance. In this study, a Finite Element Analysis (FEA) was utilized to optimize the structure of ultrasonic instrument in vibration system. Consequently, this study revealed that influence of several tips on property were minimized and it showed good property at the frequency range of 22∼32 kHz.

From UV irradiation, we achieved homeotropic liquid crystal alignment on blended photo-polymer layer which is composed of polyvinyl-cinnamate (PVCi) and homeotropic polyimide (PI). From vertical alignment (VA) mode, we measured threshold voltages by various PVCi doping concentration. Also, the rise time and fall time of VA cells were measured to verify the best doping concentration. Transmittance curves showed about 70% value between 380 nm and 780 nm wavelength which mean visible region.

The superconducting fault current limiter (SFCL) can quickly limit the fault current shortly after the short circuit occurs and recover the superconducting state after the fault removes and plays a role in compensating the voltage sag of the sound feeder adjacent to the fault feeder as well as the fault current limiting operation of the fault feeder. Especially, the flux-lock type SFCL with an isolated transformer, which consists of two parallel connected coils on an iron core and the isolated transformer connected in series with one of two coils, has different voltage sag compensating and current limiting characteristics due to the winding direction and the inductance ratio of two coils. The current limiting and the voltage sag compensating characteristics of a SFCL using a transformer winding were analyzed. Through the analysis on the short-circuit tests results considering the winding direction of two coils, the SFCL designed with the additive polarity winding has shown the higher limited fault current than the SFCL designed with the subtractive polarity winding. It could be confirmed that the higher fault current limitation of the SFCL could be contributed to the higher load voltage sag compensation.

The effect of address discharge characteristics by selective reset method is investigated to prevent the weakness of address discharge in the middle of a TV-field without increase of the black luminance. To reduce black luminance in AC PDP usually, the first subfield during one TV frame adopted the conventional rising ramp-reset waveform, whereas the other subfields adopted the subsidiary reset waveform without rising ramp type. As the wall charge for the address discharge was accumulated by only the rising ramp waveform during the first reset period, the wall charge on three electrodes was disappeared as time passed and the address discharge would be weakened in the rear subfields. To prevent a reduction of the address discharge characteristics without decrease the black luminance, the modified rising ramp reset waveform was adopted only in the sixth subfield. As a result, a modified driving method could improve the address discharge characteristics compared with selective reset driving scheme with almost the same black luminance.

Hydrogenated amorphous silicon (а-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of а-Si:H and the passivation quality at the interface of а-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the а-Si:H passivation layer with on open circuit voltage (Voc) of 637 mV.

Resistance of the front electrode is the highest proportion of the ingredients of the series resistance in crystalline silicon solar cell. While resistance of the front electrode is decreased with larger area, it induces the optical loss, causing the conversion efficiency drop. Therefore the front electrode with high aspect ratio increasing its height and decreasing is necessary for high-efficiency solar cell in considering shadowing loss and resistance of front electrode. In this paper, we used the screen printing method to form high aspect ratio electrode by multiple printing. Screen printing is the straightforward technology to establish the electrodes in silicon solar cell fabrication. The several printed front electrodes with Ag paste on silicon wafer showed the significantly increased height and slightly widen finger. As a result, the resistance of the front electrode was decreased with multiple printing even if it slightly increased the shadowing loss. We showed the improved electrical characteristics for c-Si solar cell with repeatedly printed front electrode by 0.5%. It lays a foundation for high efficiency solar cell with high aspect ratio electrode using screen printing.

In this paper, multi-string power balancing system for streetlight was developed. Accordingly, the components of the system was developed, unit converters, MPPT control unit, a bank of Li-ion battery and controls the charging and discharging. Loss by improving the efficiency of the system through the parallel operation of the unit converter output will be reduced. And by improving the efficiency of the system through the unit converter parallel operation, output losses will be reduced. Charging and discharging efficiency of the device used in a typical solar streetlight is calculated based on the maximum power input. Because of the variation of the input power has a weakness. In this paper, flexible to changes in the input, and a system was developed to minimize the cost per watt. Measure the performance of the unit module from the system, the result was more than 91%. And the charging capacity 12 V/105 Ah, module power 180 W, respectively. Should expect to be able to improve performance through continuous monitoring in the future.