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Volume 7(2); March 1994

The Improvement of Characteristics for Hydrogenated Amorphous Silicon Thin Films by Photo - Induced CVD: Yong sang Kim, Seong kyu Lee, Myung chul Jun, Jin seok Park, Min Koo Han; J Korean Inst Electr Electron Mater Eng 1994;7(2):94-99.

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The Optical Characteristics of Amorphous Se75Ge25 Thin Film by the Low - Energy Ion Beam Exposure: Hyun Yong Lee, Yun Han Mo, Hong Bay Chung; J Korean Inst Electr Electron Mater Eng 1994;7(2):100-106.

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Parameter Extraction and Device Characteristics of Submicron MOSFET ' S ( 1 ) - Process parameter extraction by DTC -: Yong Jin Seo, Eui goo Chang; J Korean Inst Electr Electron Mater Eng 1994;7(2):107-116.

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Fabrications and Properties of ZnS Thin Film used as a Buffer Layer of Electroluminescent Device: Hong ryong Kim, Jae cheol Cho, Yong tek Yoo; J Korean Inst Electr Electron Mater Eng 1994;7(2):117-121.

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A Study on the SONOS EEPROM Devices: Kwang Yell Seo; J Korean Inst Electr Electron Mater Eng 1994;7(2):123-129.

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A Study on the Indium Purification for Electronic Materials by Zone Refining: Baek yun Kim, Seon tai Kim, Bok sik Song, Dong chan Moon; J Korean Inst Electr Electron Mater Eng 1994;7(2):130-136.

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Electrical Conduction Phenomena of C22 - Quinolium ( TCNQ ) Langmuir - Blodgett Films under the High - Electric Field: Dong Myung Shin, Tae Wan Kim, Eon Sik Hong, Il Seok Song, Deok Son Yoo, Dou Yol Kang; J Korean Inst Electr Electron Mater Eng 1994;7(2):138-143.

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The Electrical Conduction Characteristics of the Multi - Dielectric Silicon Layer: Yun hae Chung, Won yul Han, Young kull Park; J Korean Inst Electr Electron Mater Eng 1994;7(2):145-149.

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The Rapid Thermal Annealing Effects and its Application to Electron Devices of Sol - Gel Derived Ferroelectric PZT Thin Films: Kwang ho Kim; J Korean Inst Electr Electron Mater Eng 1994;7(2):152-156.

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Recent Technology Trend of DRAM Semiconductor Device: Jong woo Park; J Korean Inst Electr Electron Mater Eng 1994;7(2):157-166.

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Status and Trends in EEPROM Technologies: Sang bae Yi, Kwang Yell Seo; J Korean Inst Electr Electron Mater Eng 1994;7(2):165-175.

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