This paper describes the fabrication and characteristics of a Au/Ni/Ti/3C-SiC Schottky diode with field plate (FP) edge termination. The Schottky contacts were annealed for 30 min at temperatures ranging from 0 to 800℃. At annealing temperature of 600℃, it showed an inhomogeneous Schottky barrier and had the best electrical characteristics. However, the annealing of 800℃ replaced it with ohmic behaviors because of the formation of many different types of nickel silicides. The fabricated Schottky diode had a breakdown voltage of 200 V, Schottky barrier height of 1.19 eV and worked normally even at 200℃.

We report on the formation mechanism of large Schottky barrier height (SBH) of nonalloyed Cr Schottky contacts on strained Al0.25Ga0.75N/GaN. Based on the current-voltage (I-V) and capacitance-voltage (C-V) data, the SBHs are determined to be 1.98 (±0.02) and 2.07 (±0.02) eV from the thermionic field emission and two-dimensional electron gas (2DEG) calculations, respectively. Possible formation mechanism of large SBH will be described in terms of the formation of Cr-O chemical bonding at the interface between Cr and AlGaN/GaN, low binding-energy shift to surface Fermi level, and the reduction of 2DEG electrons.

In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to 450℃. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569∼0.631 eV and work function of 4.699∼4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.

This work, the etching characteristics of Ba2Ti9O20(BTO) thin films were investigated using an inductively coupled plasma (ICP) of Ar/Cl2 gas mixture. The etch rate of BTO thin films as well as the BTO/SiO2 and BTO/PR etch selectivity were measured as functions of Ar/Cl2 mixing ratio (0∼100% Ar) at a constants gas pressure (6 mTorr), total gas flow rate (50 sccm), input power (700 W) and bias power (200 W). The etch rate of BTO thin films decreased with increasing Ar fraction. To analyze the etching mechanism an optical emission spectroscopy (OES), double Langmuir probe(DLP) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out.

Silicon carbide (SiC)-based gas sensors can be operated at very high temperatures. So far, catalytic metal-schottky diodes respond fast to a change between a reducing and an oxidizing atmosphere. Therefore SiC diodes have been suggested for high temperature gas sensor applications. In this work, the effect of reactivity of the catalytic surface on the 4H-SiC sensor-structures in 375 K∼775 K have been studied and some fundamental simulations have also been performed.

In this study, lead-free (K0.5Na0.5+X)(Nb0.96Sb0.04)O3+0.2mol%La2O3+1.2mol% K4CuNb8O23 (X= 0∼0.025) ceramics were fabricated by normal sintering method at 1060℃ for 5 h. Microstructures, piezoelectric and dielectric properties of specimens were investigated with special emphasis in the influence of Na excess addition. The grain size of specimen was slightly decreased with increasing Na content. In the 2 [mol%] Na excess addition of NKNS ceramics, density, electromechanical coupling factor, piezoelectric constant and electromechancal quality factor of specimen were found to reach the optimum values of 4.25 [g/cm3], 0.4357, 154.43 [pC/N] and 580, respectively.

Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. In this paper, networks of Multi-walled carbon nanotube (MWCNT) materials were investigated as a resistive gas sensors for the H2 gas detection. Sensor films were fabricated by the air spray method using the multi-walled CNTs dispersion solution on the glass substrates cured with plasma and nitrocellulose. Sensors were characterized by the resistance measurements in the self-fabricated oven in order to find the optimum detection properties for the hydrogen gas molecular. The sensitivity and the linearity of the MWVNT sensors using the glass substrate cured with plasma for the H2 gas concentration of 0.06∼0.6 ppm are 0.013∼0.097%/sec and 0.131∼0.959%FS, respectively. The MWCNT film was excellent in the response for the hydrogen gas moleculars and its reaction speed was very fast, which could be using as hydrogen gas sensor. The resistance of the fabricated sensors decreases when the sensors are exposed to H2 gas.

Recently, low temperature co-fired ceramic (LTCC) technology is widely used in sensors, actuators and microsystems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of sputtering gas ratio and annealing temperature on the crystal structure of Pb(ZrTi)O3 (PZT) thin films deposited on LTCC substrate. The LTCC substrate with thickness of 400 ㎛ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Pt / Ti / LTCC substrates by RF magnetron sputtering method. The results showed that the crystallization of the films were enhanced as increasing O2 mixing ratio. At about 25% O2 mixing ratio, was well crystallized in the perovskite structure. PZT thin films was annealed at various temperatures. When the annealing temperature is lower, the PZT thin films become a phyrochlore phase. However, when the annealing temperature is higher than 600℃, the PZT thin films become a perovskite phase. At the annealing temperature of 700℃, perovskite PZT thin films with good quality structure was obtained.

The Gallium-doped ZnO(GZO) film deposited at a temperature of 200℃ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of 2.0 mΩ·cm because of its high crystallinity. Effect of Al2O3 oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of Al2O3 buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of O2/(Ar+O2) flow rate ratio during the buffer layer deposition. It is considered that the Al2O3 buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

In this study, we proposed a novel electrode structure for the fringe field switching (FFS) mode LCD and performed a three-dimensional computer simulation to calculate the optical transmittance for the new structure. In the simulation Erickson-leslie equation and Berreman 4×4 matrix were used for obtaining the director distribution profiles of liquid crystal molecules and the electro-optical characteristics, respectively. Considering the complexity of the motional equation of the liquid crystal molecules, FDM (finite difference method) was used as a numerical method. From the results, We revealed that the light transmission of the newly designed pixel structure is expended to the edge of the pixel electrode. We also confirmed that the light transmittance increased more than 13% compared to that of the conventional electrode structure.

Recently, ultrasound, infrared detector, V-I characteristic, gas analysis, UV (ultra-violet rays) camera etc. is used as inspections and diagnoses of the safety of power equipment. Especially, UV camera have attracted a great deal of interest from the view point of easy judgement. UV camera is used corona discharge. One of the most important and difficult problems to be solved filer design, materials and corona discharge. This paper is studied on the temperature characteristics, UV generation and shape analysis and corona pulse count according to the electrode distance and applied voltage. Also, Corona discharge characteristics in air are analyzed using prototype UV camera of Korea. UV generation due to surface discharge of AC is higher than that of DC.

This paper dealt with a partial discharge (PD) detection method for insulation diagnosis in cast-resin transformers. To detect PD pulse, a planar-capacitive probe was designed and fabricated. The probe has no insulation problem and can be installed on cast-resin transformers even in operation since it does not connect with high voltage conductor. The PD measurement system consists of the capacitive probe, a coupling network of 100 [kHz] low-cutoff frequency, and an amplifier with a gain of 40 [dB] and a frequency bandwidth of 500 [Hz]∼45 [MHz]. A plane-needle and a plane-plane electrode system were fabricated to simulate insulation defects in a cast-resin transformer. Sensitivity of the PD measurement system, which is evaluated by a standard calibrator was 0.35 [mV/pC] for positive and 0.45 [mV/pC] for negative, respectively. The PD detection by the capacitive probe was less sensitive than that by a coupling capacitor according to IEC 60270, but we could analyze the magnitude and the phase distribution of PD pulse.

In this paper, nonvolatile nano-floating gate memory devices are fabricated with ZnO nanowires and Al nanoparticles on a SiO2/Si substrate. Al nanoparticles used as floating gate nodes are formed by the sputtering method. The fabricated device exhibits a threshold voltage shift of -1.5 V. In addition, we investigate the endurance and retention characteristics of the nano-floating gate memory device.

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surface. One of the front metal contacts is Ni/Cu plating that it is available to simply and inexpensive production to apply mass production. Ni is shown to be a suitable barrier to Cu diffusion into the silicon. The process of Ni electroless plating on front silicon surface is performed using a chemical bath. Additives and buffer agents such as ammonium chloride is added to maintain the stability and pH control of the bath. Ni deposition rate is found to vary with temperature, time, utilization of bath. The experimental result shown that Ni layer by SEM (scanning electron microscopy) and EDX analysis. Finally, plated Ni/Cu contact solar cell result in an efficiency of 17.69% on 2×2 cm2, Cz wafer.

In this work, electrochemical characteristics and optical transmittance of carbon nanotubes (CNTs) counter electrodes which had different amount of CNTs in CNTs slurries were analyzed. Two-step heat treatment processes were applied to achieve well-fabricated CNTs electrode. Three sets of CNTs electrodes and dye-sensitized solar cells (DSSCs) with CNTs counter electrodes were prepared. As the amount of CNTs increased, sheet resistance of CNTs electrode decreased. CNTs electrode with low sheet resistance had low electrochemical impedance and fast redox reaction. On the other hand, in case of CNTs counter electrode with low density of CNTs, performance of the dye-sensitized solar cell was improved due to its high optical transmittance. We found that the transmittance of CNTs counter electrode influence the performance of dye-sensitized solar cells.

Thermoelectric bismuth telluride (Bi2Te3) films were deposited on 4° off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than 400℃. However, three dimensional growth mode (3D) was observed at substrate temperature higher than 400℃. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that Bi2Te3 films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 μV/K and the power factor was 1.86×10-3 W/mK2 at the substrate temperature of 400℃. Bi2Te3 films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.