Transparent amorphous In-Si-O (ISO)/Ag/In-Si-O (ISO) has been reported for low emissivity(low-e) applications. Effective Si doping into the In2O3 matrix led to a completely amorphous ISO film aswell as a low resistivity and a high optical transmittance. The optical and electrical performances wereexamined by measuring transmittance with a UV-VIS spectrophotometer and resistivity with a Hall effectmeasurement. Consequently, low-e glass with ISO/Ag/ISO showed a high transparency in the visibleregion and low emissivity in the infrared region, indicating that ISO is a promising amorphoustransparent electrode for low-e glass.

Al2O3 films on silicon carbide were fabricated by Aerosol deposition with annealing temperatureat 800℃ and 1,000℃. The effect of thermal treatment on physical properties of Al2O3 thin films has beeninvestigated by XRD (X-ray diffraction), AFM (atomic force microscope), SEM (scanning electronmicroscope), and AES (auger electron spectroscopy). Also electrical properties have been investigated byKeithley 4,200 semiconductor parameter analyzer to explain the interface trapped charge density (Dit),flatband voltage (VFB) and leakage current (Io). Al2O3 films become crystallized with increasingtemperature by calculating full width at half maximum (FWHM) of diffraction peaks, also surfacemorphology is observed by topography measurement in non-contact mode AFM. Dit was 2.26×10-12eV-1.cm-2 at 800℃ annealed sample, which is the lowest value in all samples. Also the sample annealedat 800℃ has the lowest leakage current of 4.89×10-13 A.

The resistive switching characteristics of resistive random access memory (ReRAM) based onamorphous Ge0.5Se0.5 thin films have been demonstrated by using Ti/Ag nanocrystals/Ge0.5Se0.5/Ptstructure. Ag nanocrystals (Ag NCs) were spread on the amorphous Ge0.5Se0.5 thin film and they playedthe role of metal ions source. As a result, comparing the conventional Ag/Ge0.5Se0.5/Pt structure, thisTi/Ag NCs/Ge0.5Se0.5/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS)characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DCendurance(> 100 cycles), and the excellent data retention (> 104 sec) properties were found from theTi/Ag NCs/Ge0.5Se0.5/Pt structured ReRAM device.

In this paper, we analyze electrical characteristics of n/p-pillar layer according to trench anglewhich is the most important characteristics of SJ MOSFET and core process. Because research target is600 V class SJ MOSFET, so conclusively trench angle deduced 89.5 degree to implement the breakdownvoltage 750 V with 30% margin rate. we found that on resistance is 22 mohm·cm2 and threshold voltageis 3.5 V. Moreover, depletion layer of electric field distribution also uniformly distributes.

This paper was developed and described core-process to implement low on resistance whichwas the most important characteristics of SJ (super junction) MOSFET. Firstly, using process-simulation,SJ MOSFET optimal structure was set and developed its process flow chart by repeated simulation. Following process flow, gate level process was performed. And source and drain level process wassimilar to genral planar MOSFET, so the process was the same as the general planar MOSFET. Andthen to develop deep trench process which was main process of the whole process, after finishing photomask process, we developed deep trench process. We expected that developed process was necessary todevelop SJ MOSFET for automobile semiconductor.

In this research, the structural, physical and electrical characteristics of Ni-Fe core chosen tominimize the errors of the Hall current sensors were investigated and Hall current sensor using Ni-Fecore was fabricated. In the result, the fabricated Ni-Fe sample exhibited the maximum hardness about29.5 GPa and the low friction coefficient about 0.35, and electrical resistivity over 90 mOhm·cm. And alsoHall current sensor using the fabricated Ni-Fe core showed linear current-voltage properties for DCcurrent at 25℃ temperature.

Thin films of cubic Na0.6WO3, which is one of the sodium tungsten bronze, were fabricated byrf sputtering for the electrode applications in integrated sensors and actuators. A single-phase cubicNa0.6WO3 sputtering target of power type was prepared by conventional solid-state reaction. Thin filmswere deposited from the powder target, and the as-deposited films were amorphous, thus they annealedby tube furnace or RTP for crystallization. Thin films having cubic phase NaxWO3 were fabricated by theoptimization of sputtering and post-annealing conditions, but single-phase cubic Na0.6WO3 thin films werenot obtained. Although the films were not in single phase, they had good electrical conduction propertiesshowing electrical resistivities of 10-4 Ω·cm order.

An excellent hydrophobic surface has a high contact angle over 147 degree and the contact anglehysteresis below 50 was produced by using roughness combined with hydrophobic PTFE coatings, which were alsoconfirmed to exhibit an extreme adhesion to glass substrate. To form the rough surface, the glass was etched byAr-plasma. A very thin PTFE film was coated on the plasma etched glass surface. Roughness factors before orafter PTFE coating on the plasma etched glass surface, based on Wensel``s model were calculated, which agreeswell with the dependence of the contact angle on the roughness factor is predicted by Wensel``s model. The PTFEfilms deposited on glass by using a conventional rf-magnetron sputtering. The glass substrates were etchedAr-plasma prior to the deposition of PTFE. Their hydrophobicities are investigated for application as a anti-foulingcoating layer on the screen of displays. It is found that the hydrophobicity of PTFE films mainly depends on thesputtering conditions, such as rf-power, Ar gas content introduced during deposition. These conditions are closelyrelated to the deposition rate or thickness of PTFE film. Thus, it is also found that the deposition rate or the filmthickness affects sensitively the geometrical morphology formed on surface of the rf-sputtered PTFE films. Inparticular, 1,950-nm-thick PTFE films deposited for 30 minute by rf-power 50 watt under Ar gas content of 20sccm shows a very excellent optical transmittance and a good anti-fouling property and a good durability.

In this study, using the silicone rubber sample of 4 cm × 4 cm × 0.1 cm for low voltage cable,the electrostatic electrification properties of three samples that the conductive Al of 0%, 25%, and 50% isattached to the surface of sample was measured. The following conclusion was obtained through thisexperiment. 1) In case of the sample which has the Al area of 50%, the higher the humidity to 90% in thetemperature of 10℃, the electrostatic electrification voltage was reduced about 0.25 kV to 0.02 kV, and itconfirmed that the electrostatic electrification voltage was in constant about 0.02 kV in the temperature over20℃. 2) Increasing the Al area of samples of 0%, 25%, and 50% in temperature of 10℃, it confirmed thatthe electrostatic electrification voltage was reduced by about 2.67 kV, 2.02 k, 0.21 kV. 3) This study showsthat the conductor, followed by temperature and humidity affects the electrostatic electrification voltage.

Thermal batteries are primary reserve batteries that use inorganic salt as electrolytes which areinactive at room temperature. The two principal heat sources that have been used in thermal batteries areheat paper and heat pellets. As soon as the heat paper, which is ignited by the initiator, in turn ignites theheat pellets, all the solid electrolytes are melted into excellent ionic conductors. However, the highcombustion temperature by heat papers in thermal batteries causes thermal decomposition at the cathode,eventually leading to a thermal runaway. In this paper, we have attempted to prepare Zr/BaCrO4 heatpapers coated with KCl molten salt. We have also investigated the effect of a molten salt coating on theheat papers through the thermal characteristics such as calorimetric value, combustion temperature andburning rate. The calorimetric value and combustion temperature of heat papers were reduced with anincrease in the molten salt coating. As a result, the molten salt coating on heat papers greatly reducedrisk of a thermal runaway and improved the stability of thermal batteries.

Because of the development of LED technology, products due to high output and compact, thematerial with high thermal conductivity has been developed. Now that heat radiating part of the LEDlamp is currently used for die casting of aluminum. The development of aluminum with excellent thermalconductivity is required. In this study, we measured the thermal properties and compared them while weproduced the alloy by changing the component of die casting aluminum. From this study, the thermalconductivity and thermal resistance of the developed alloy were superior to die casting aluminum.

Autonomous Underwater Vehicles (AUV``s) provide an important means for collecting detailed scientific information from the ocean depths. The hull resistance of an AUV is an important factor in determining the power requirements and range of the vehicle. This paper describes a design method that uses Computational Fluid Dynamics (CFD) to determine the hull resistance of an AUV under development. The CFD results reveal the distribution of the hydrodynamic values (velocity, pressure, etc.) of an AUV with a ducted propeller. This paper also discusses the optimization of the AUV hull profile to reduce the total resistance. This paper demonstrates that shape optimization in a conceptual design is possible by using a commercial CFD package. Optimum design work to minimize the drag force of an AUV was carried out, for a given object function and constraints.